Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures

V. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov

Результат исследований: Научные публикации в периодических изданияхстатьярецензирование

1 Цитирования (Scopus)

Аннотация

We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.

Язык оригиналаанглийский
Страницы (с-по)231-235
Число страниц5
ЖурналJournal of Magnetism and Magnetic Materials
Том459
DOI
СостояниеОпубликовано - 1 авг 2018

Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов

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