Standard
InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics. / Talalaev, V. G.; Senichev, A. V.; Novikov, B. V.; Tomm, J. W.; Elsaesser, T.; Zakharov, N. D.; Werner, P.; Goesele, U.; Samsonenkoe, Y. B.; Cirlin, G. E.
в:
Semiconductors, Том 44, № 8, 2010, стр. 1050-1058.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Talalaev, VG, Senichev, AV
, Novikov, BV, Tomm, JW, Elsaesser, T, Zakharov, ND, Werner, P, Goesele, U, Samsonenkoe, YB & Cirlin, GE 2010, '
InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics',
Semiconductors, Том. 44, № 8, стр. 1050-1058.
https://doi.org/DOI: 10.1134/S1063782610080178APA
Talalaev, V. G., Senichev, A. V.
, Novikov, B. V., Tomm, J. W., Elsaesser, T., Zakharov, N. D., Werner, P., Goesele, U., Samsonenkoe, Y. B., & Cirlin, G. E. (2010).
InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics.
Semiconductors,
44(8), 1050-1058.
https://doi.org/DOI: 10.1134/S1063782610080178Vancouver
Author
Talalaev, V. G. ; Senichev, A. V.
; Novikov, B. V. ; Tomm, J. W. ; Elsaesser, T. ; Zakharov, N. D. ; Werner, P. ; Goesele, U. ; Samsonenkoe, Y. B. ; Cirlin, G. E. /
InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics. в:
Semiconductors. 2010 ; Том 44, № 8. стр. 1050-1058.
BibTeX
@article{2cd2643ae7f74bd8a3d81c0dcc02a4c6,
title = "InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics",
author = "Talalaev, {V. G.} and Senichev, {A. V.} and Novikov, {B. V.} and Tomm, {J. W.} and T. Elsaesser and Zakharov, {N. D.} and P. Werner and U. Goesele and Samsonenkoe, {Y. B.} and Cirlin, {G. E.}",
year = "2010",
doi = "DOI: 10.1134/S1063782610080178",
language = "не определен",
volume = "44",
pages = "1050--1058",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",
}
RIS
TY - JOUR
T1 - InGaAs Tunnel-Injection Structures with Nanobridges: Excitation Transfer and Luminescence Kinetics
AU - Talalaev, V. G.
AU - Senichev, A. V.
AU - Novikov, B. V.
AU - Tomm, J. W.
AU - Elsaesser, T.
AU - Zakharov, N. D.
AU - Werner, P.
AU - Goesele, U.
AU - Samsonenkoe, Y. B.
AU - Cirlin, G. E.
PY - 2010
Y1 - 2010
U2 - DOI: 10.1134/S1063782610080178
DO - DOI: 10.1134/S1063782610080178
M3 - статья
VL - 44
SP - 1050
EP - 1058
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 8
ER -
