TY - JOUR

T1 - Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

AU - Khrebtov, Artem

AU - Danilov, Vladimir V.

AU - Kulagina, Anastasia S.

AU - Reznik, Rodion R.

AU - Skurlov, Ivan D.

AU - Litvin, Alexander P.

AU - Safin, Farrukh M.

AU - Gridchin, Vladislav O.

AU - Shevchuk, Dmitriy S.

AU - Shmakov, Stanislav

AU - Yablonskiy, Artem N.

AU - Cirlin, George E.

N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/3/5

Y1 - 2021/3/5

N2 - The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the "reverse transfer" mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

AB - The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the "reverse transfer" mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

KW - nanowires

KW - TOPO ligands

KW - molecular-beam epitaxy

KW - luminescence kinetics

KW - reverse transfer

KW - Molecular-beam epitaxy

KW - Luminescence kinetics

KW - Reverse transfer

KW - Nanowires

UR - http://www.scopus.com/inward/record.url?scp=85102069344&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/8dfebbcb-e17a-305d-8c8a-ac8d5df10aea/

U2 - 10.3390/nano11030640

DO - 10.3390/nano11030640

M3 - Article

VL - 11

SP - 1

EP - 9

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 3

M1 - 640

ER -