Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

O. F. Vyvenko, N. V. Bazlov, M. V. Trushin, A. A. Nadolinski, M. Seibt, W. Schröter, G. Hahn

Результат исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциирецензирование

Аннотация

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.

Язык оригиналаанглийский
Название основной публикацииGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
ИздательTrans Tech Publications Ltd
Страницы279-284
Число страниц6
ISBN (печатное издание)3908451132, 9783908451136
DOI
СостояниеОпубликовано - 2005
Событие11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, Франция
Продолжительность: 25 сен 200530 сен 2005

Серия публикаций

НазваниеSolid State Phenomena
Том108-109
ISSN (печатное издание)1012-0394

конференция

конференция11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
Страна/TерриторияФранция
ГородGiens
Период25/09/0530/09/05

Предметные области Scopus

  • Атомная и молекулярная физика и оптика
  • Материаловедение (все)
  • Физика конденсатов

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