HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates

V. I. Nikolaev, A. I. Pechnikov, V. V. Nikolaev, M. P. Scheglov, A. V. Chikiryaka, S. I. Stepanov, O. S. Medvedev, S. V. Shapenkov, E. V. Ubyivovk, O. F. Vyvenko

Результат исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференции

Выдержка

Here we report on the growth and characterisation of α-and ϵ-Ga2O3 epitaxial films produced by halide vapour phase epitaxy (HVPE). The films were deposited on two types of substrate: (0001) plain sapphire substrates and (0001) patterned sapphire substrates with regular cone-like features. In order to guarantee the same growth conditions on plain and patterned sapphire, the two substrates were used simultaneously in the same growth run. After the deposition the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), optical transmission (OT) spectroscopy, and cathodoluminescence (CL). The growth on plain sapphire substrate produced an 11 μm thick continuous α-Ga2O3 layer. The full width at half maximum (FWHM) of the (0006) XRD rocking curve is 180 arcsec, which indicates good crystallinity of the layer. In contrast, growth on the patterned sapphire substrate resulted in a layer with regular spaced faceted pyramids at the surface. XRD analysis revealed the presence of both α-and ϵ-phases in Ga2O3 grown on patterned sapphire substrate. The presence of the ϵ-Ga2O3 phase, which has narrower bandgap, was also confirmed by optical transmission measurements. SEM, TEM, and SEM CL observations revealed that α-Ga2O3 phase forms columnar structures on top of sapphire cone, and ϵ-Ga2O3 phase fills the valleys between the columns.

Язык оригиналаанглийский
Номер статьи055049
ЖурналJournal of Physics: Conference Series
Том1400
Номер выпуска5
DOI
СостояниеОпубликовано - 11 дек 2019
СобытиеInternational Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация
Продолжительность: 22 окт 201924 окт 2019

Отпечаток

vapor phase epitaxy
halides
sapphire
plains
cathodoluminescence
scanning electron microscopy
cones
diffraction
transmission electron microscopy
x rays
pyramids
valleys
crystallinity
curves
spectroscopy

Предметные области Scopus

  • Физика и астрономия (все)

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Nikolaev, V. I. ; Pechnikov, A. I. ; Nikolaev, V. V. ; Scheglov, M. P. ; Chikiryaka, A. V. ; Stepanov, S. I. ; Medvedev, O. S. ; Shapenkov, S. V. ; Ubyivovk, E. V. ; Vyvenko, O. F. / HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates. В: Journal of Physics: Conference Series. 2019 ; Том 1400, № 5.
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title = "HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates",
abstract = "Here we report on the growth and characterisation of α-and ϵ-Ga2O3 epitaxial films produced by halide vapour phase epitaxy (HVPE). The films were deposited on two types of substrate: (0001) plain sapphire substrates and (0001) patterned sapphire substrates with regular cone-like features. In order to guarantee the same growth conditions on plain and patterned sapphire, the two substrates were used simultaneously in the same growth run. After the deposition the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), optical transmission (OT) spectroscopy, and cathodoluminescence (CL). The growth on plain sapphire substrate produced an 11 μm thick continuous α-Ga2O3 layer. The full width at half maximum (FWHM) of the (0006) XRD rocking curve is 180 arcsec, which indicates good crystallinity of the layer. In contrast, growth on the patterned sapphire substrate resulted in a layer with regular spaced faceted pyramids at the surface. XRD analysis revealed the presence of both α-and ϵ-phases in Ga2O3 grown on patterned sapphire substrate. The presence of the ϵ-Ga2O3 phase, which has narrower bandgap, was also confirmed by optical transmission measurements. SEM, TEM, and SEM CL observations revealed that α-Ga2O3 phase forms columnar structures on top of sapphire cone, and ϵ-Ga2O3 phase fills the valleys between the columns.",
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HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates. / Nikolaev, V. I.; Pechnikov, A. I.; Nikolaev, V. V.; Scheglov, M. P.; Chikiryaka, A. V.; Stepanov, S. I.; Medvedev, O. S.; Shapenkov, S. V.; Ubyivovk, E. V.; Vyvenko, O. F.

В: Journal of Physics: Conference Series, Том 1400, № 5, 055049, 11.12.2019.

Результат исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференции

TY - JOUR

T1 - HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates

AU - Nikolaev, V. I.

AU - Pechnikov, A. I.

AU - Nikolaev, V. V.

AU - Scheglov, M. P.

AU - Chikiryaka, A. V.

AU - Stepanov, S. I.

AU - Medvedev, O. S.

AU - Shapenkov, S. V.

AU - Ubyivovk, E. V.

AU - Vyvenko, O. F.

PY - 2019/12/11

Y1 - 2019/12/11

N2 - Here we report on the growth and characterisation of α-and ϵ-Ga2O3 epitaxial films produced by halide vapour phase epitaxy (HVPE). The films were deposited on two types of substrate: (0001) plain sapphire substrates and (0001) patterned sapphire substrates with regular cone-like features. In order to guarantee the same growth conditions on plain and patterned sapphire, the two substrates were used simultaneously in the same growth run. After the deposition the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), optical transmission (OT) spectroscopy, and cathodoluminescence (CL). The growth on plain sapphire substrate produced an 11 μm thick continuous α-Ga2O3 layer. The full width at half maximum (FWHM) of the (0006) XRD rocking curve is 180 arcsec, which indicates good crystallinity of the layer. In contrast, growth on the patterned sapphire substrate resulted in a layer with regular spaced faceted pyramids at the surface. XRD analysis revealed the presence of both α-and ϵ-phases in Ga2O3 grown on patterned sapphire substrate. The presence of the ϵ-Ga2O3 phase, which has narrower bandgap, was also confirmed by optical transmission measurements. SEM, TEM, and SEM CL observations revealed that α-Ga2O3 phase forms columnar structures on top of sapphire cone, and ϵ-Ga2O3 phase fills the valleys between the columns.

AB - Here we report on the growth and characterisation of α-and ϵ-Ga2O3 epitaxial films produced by halide vapour phase epitaxy (HVPE). The films were deposited on two types of substrate: (0001) plain sapphire substrates and (0001) patterned sapphire substrates with regular cone-like features. In order to guarantee the same growth conditions on plain and patterned sapphire, the two substrates were used simultaneously in the same growth run. After the deposition the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), optical transmission (OT) spectroscopy, and cathodoluminescence (CL). The growth on plain sapphire substrate produced an 11 μm thick continuous α-Ga2O3 layer. The full width at half maximum (FWHM) of the (0006) XRD rocking curve is 180 arcsec, which indicates good crystallinity of the layer. In contrast, growth on the patterned sapphire substrate resulted in a layer with regular spaced faceted pyramids at the surface. XRD analysis revealed the presence of both α-and ϵ-phases in Ga2O3 grown on patterned sapphire substrate. The presence of the ϵ-Ga2O3 phase, which has narrower bandgap, was also confirmed by optical transmission measurements. SEM, TEM, and SEM CL observations revealed that α-Ga2O3 phase forms columnar structures on top of sapphire cone, and ϵ-Ga2O3 phase fills the valleys between the columns.

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U2 - 10.1088/1742-6596/1400/5/055049

DO - 10.1088/1742-6596/1400/5/055049

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Nikolaev VI, Pechnikov AI, Nikolaev VV, Scheglov MP, Chikiryaka AV, Stepanov SI и соавт. HVPE growth of α-and ϵ-Ga2O3 on patterned sapphire substrates. Journal of Physics: Conference Series. 2019 Дек. 11;1400(5). 055049. https://doi.org/10.1088/1742-6596/1400/5/055049