HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates

V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, S. V. Shapenkov, M. P. Scheglov, A. V. Chikiryaka, O. F. Vyvenko

Результат исследований: Научные публикации в периодических изданияхстатьярецензирование

9 Цитирования (Scopus)

Аннотация

In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.

Язык оригиналаанглийский
Номер статьи045014
ЖурналECS Journal of Solid State Science and Technology
Том9
Номер выпуска4
DOI
СостояниеОпубликовано - 5 янв 2020

Предметные области Scopus

  • Электроника, оптика и магнитные материалы

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