Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

S. A. Kukushkin, A. V. Osipov, I. A. Kasatkin, V. Y. Mikhailovskii, A. I. Romanychev

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

Crystalline structure and composition of the ZnO films grown by atomic layer deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were studied. The SiC buffer layers have been synthesized by a novel method of atomic substitution (partial chemical replacement) of Si atoms by carbon atoms in the subsurface layer of the Si substrate. A four-component epitaxial texture of ZnO in a direction close to [101] on the n- and p-type (100) Si vicinal substrates with a SiC buffer layer has been revealed and investigated with electron diffraction. Formation mechanism of the epitaxial textures of ZnO was found to depend on the conductivity type (n- or p-type) of the Si (100) substrates. A theoretical model explaining the effect of the texture formation and its dependence on the type of Si substrate conductivity has been proposed. The effect is associated with the transformation of the vicinal Si (100) surfaces into the SiC surfaces during its synthesis by the atomic substitution method. Significant differences have been found between the structures and between the growth mechanisms of the ZnO layers on the SiC/Si (111) and (100) substrates.

Язык оригиналаанглийский
Страницы (с-по)30-39
Число страниц10
ЖурналMaterials Physics and Mechanics
Том42
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2019

Отпечаток

Atomic layer deposition
atomic layer epitaxy
Substrates
Buffer layers
textures
Textures
buffers
Substitution reactions
substitutes
Atoms
conductivity
Electron diffraction
atoms
Carbon
electron diffraction
Crystalline materials
carbon
synthesis
Chemical analysis

Предметные области Scopus

  • Материаловедение (все)
  • Физика конденсатов
  • Сопротивление материалов
  • Общее машиностроение

Цитировать

Kukushkin, S. A., Osipov, A. V., Kasatkin, I. A., Mikhailovskii, V. Y., & Romanychev, A. I. (2019). Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates. Materials Physics and Mechanics, 42(1), 30-39. https://doi.org/10.18720/MPM.4212019_4
Kukushkin, S. A. ; Osipov, A. V. ; Kasatkin, I. A. ; Mikhailovskii, V. Y. ; Romanychev, A. I. / Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates. В: Materials Physics and Mechanics. 2019 ; Том 42, № 1. стр. 30-39.
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abstract = "Crystalline structure and composition of the ZnO films grown by atomic layer deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were studied. The SiC buffer layers have been synthesized by a novel method of atomic substitution (partial chemical replacement) of Si atoms by carbon atoms in the subsurface layer of the Si substrate. A four-component epitaxial texture of ZnO in a direction close to [101] on the n- and p-type (100) Si vicinal substrates with a SiC buffer layer has been revealed and investigated with electron diffraction. Formation mechanism of the epitaxial textures of ZnO was found to depend on the conductivity type (n- or p-type) of the Si (100) substrates. A theoretical model explaining the effect of the texture formation and its dependence on the type of Si substrate conductivity has been proposed. The effect is associated with the transformation of the vicinal Si (100) surfaces into the SiC surfaces during its synthesis by the atomic substitution method. Significant differences have been found between the structures and between the growth mechanisms of the ZnO layers on the SiC/Si (111) and (100) substrates.",
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Kukushkin, SA, Osipov, AV, Kasatkin, IA, Mikhailovskii, VY & Romanychev, AI 2019, 'Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates', Materials Physics and Mechanics, том. 42, № 1, стр. 30-39. https://doi.org/10.18720/MPM.4212019_4

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates. / Kukushkin, S. A.; Osipov, A. V.; Kasatkin, I. A.; Mikhailovskii, V. Y.; Romanychev, A. I.

В: Materials Physics and Mechanics, Том 42, № 1, 01.01.2019, стр. 30-39.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Kasatkin, I. A.

AU - Mikhailovskii, V. Y.

AU - Romanychev, A. I.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Crystalline structure and composition of the ZnO films grown by atomic layer deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were studied. The SiC buffer layers have been synthesized by a novel method of atomic substitution (partial chemical replacement) of Si atoms by carbon atoms in the subsurface layer of the Si substrate. A four-component epitaxial texture of ZnO in a direction close to [101] on the n- and p-type (100) Si vicinal substrates with a SiC buffer layer has been revealed and investigated with electron diffraction. Formation mechanism of the epitaxial textures of ZnO was found to depend on the conductivity type (n- or p-type) of the Si (100) substrates. A theoretical model explaining the effect of the texture formation and its dependence on the type of Si substrate conductivity has been proposed. The effect is associated with the transformation of the vicinal Si (100) surfaces into the SiC surfaces during its synthesis by the atomic substitution method. Significant differences have been found between the structures and between the growth mechanisms of the ZnO layers on the SiC/Si (111) and (100) substrates.

AB - Crystalline structure and composition of the ZnO films grown by atomic layer deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were studied. The SiC buffer layers have been synthesized by a novel method of atomic substitution (partial chemical replacement) of Si atoms by carbon atoms in the subsurface layer of the Si substrate. A four-component epitaxial texture of ZnO in a direction close to [101] on the n- and p-type (100) Si vicinal substrates with a SiC buffer layer has been revealed and investigated with electron diffraction. Formation mechanism of the epitaxial textures of ZnO was found to depend on the conductivity type (n- or p-type) of the Si (100) substrates. A theoretical model explaining the effect of the texture formation and its dependence on the type of Si substrate conductivity has been proposed. The effect is associated with the transformation of the vicinal Si (100) surfaces into the SiC surfaces during its synthesis by the atomic substitution method. Significant differences have been found between the structures and between the growth mechanisms of the ZnO layers on the SiC/Si (111) and (100) substrates.

KW - ALD method

KW - Silicon carbide; epitaxy; thin film growth

KW - Zinc oxide films

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JO - ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ

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