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Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells. / Poltavtsev, S.V.; Efimov, Y.P.; Dolgikh, Y.K.; Eliseev, S.A.; Petrov, V.V.; Ovsyankin, V.V.
в:
Solid State Communications, Том 199, 2014, стр. 47-51.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Poltavtsev, SV, Efimov, YP, Dolgikh, YK, Eliseev, SA, Petrov, VV & Ovsyankin, VV 2014, '
Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells',
Solid State Communications, Том. 199, стр. 47-51.
https://doi.org/10.1016/j.ssc.2014.09.005
APA
Poltavtsev, S. V., Efimov, Y. P., Dolgikh, Y. K., Eliseev, S. A., Petrov, V. V., & Ovsyankin, V. V. (2014).
Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells.
Solid State Communications,
199, 47-51.
https://doi.org/10.1016/j.ssc.2014.09.005
Vancouver
Author
BibTeX
@article{c6be8a898c16404b93a68d2cada62455,
title = "Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells",
author = "S.V. Poltavtsev and Y.P. Efimov and Y.K. Dolgikh and S.A. Eliseev and V.V. Petrov and V.V. Ovsyankin",
year = "2014",
doi = "10.1016/j.ssc.2014.09.005",
language = "English",
volume = "199",
pages = "47--51",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier",
}
RIS
TY - JOUR
T1 - Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells
AU - Poltavtsev, S.V.
AU - Efimov, Y.P.
AU - Dolgikh, Y.K.
AU - Eliseev, S.A.
AU - Petrov, V.V.
AU - Ovsyankin, V.V.
PY - 2014
Y1 - 2014
U2 - 10.1016/j.ssc.2014.09.005
DO - 10.1016/j.ssc.2014.09.005
M3 - Article
VL - 199
SP - 47
EP - 51
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
ER -
