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Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells. / Poltavtsev, S.V.; Stroganov, B.V.

в: Physics of the Solid State, Том 52, № 9, 2010, стр. 1899–1905.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Poltavtsev, SV & Stroganov, BV 2010, 'Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells', Physics of the Solid State, Том. 52, № 9, стр. 1899–1905. https://doi.org/10.1134/S1063783410090180

APA

Poltavtsev, S. V., & Stroganov, B. V. (2010). Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells. Physics of the Solid State, 52(9), 1899–1905. https://doi.org/10.1134/S1063783410090180

Vancouver

Poltavtsev SV, Stroganov BV. Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells. Physics of the Solid State. 2010;52(9):1899–1905. https://doi.org/10.1134/S1063783410090180

Author

Poltavtsev, S.V. ; Stroganov, B.V. / Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells. в: Physics of the Solid State. 2010 ; Том 52, № 9. стр. 1899–1905.

BibTeX

@article{789159894efb4fb3a1234a8f64bdb8d5,
title = "Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells",
abstract = "A technique that makes it possible to investigate the mechanisms of phase relaxation of excitons in GaAs single quantum wells has been developed using resonant reflection spectroscopy. The dependence of the oscillator strength of the exciton transition on the quantum well thickness has been measured in the thickness range 9.1-30.0 nm. It has been demonstrated that the oscillator strength with a high accuracy does not depend on the temperature in the range 8-90 K. The temperature dependence of the homogeneous broadening has been measured, and the inhomogeneous broadening of the resonance exciton line has been determined. A nonmonotonic dependence of the spectral broadening of the exciton line on the intensity of the resonant excitation at a temperature of 8 K has been revealed for the sample with a high-quality quantum well. It has been established that an increase in the excitation level by five orders of magnitude above the linear limit leads to an insignificant change in the oscillator strength of the excit",
keywords = "oscillator strength, GaAs single quantum wells, exciton resonance, resonant reflection, Brewster geometry",
author = "S.V. Poltavtsev and B.V. Stroganov",
year = "2010",
doi = "10.1134/S1063783410090180",
language = "English",
volume = "52",
pages = "1899–1905",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells

AU - Poltavtsev, S.V.

AU - Stroganov, B.V.

PY - 2010

Y1 - 2010

N2 - A technique that makes it possible to investigate the mechanisms of phase relaxation of excitons in GaAs single quantum wells has been developed using resonant reflection spectroscopy. The dependence of the oscillator strength of the exciton transition on the quantum well thickness has been measured in the thickness range 9.1-30.0 nm. It has been demonstrated that the oscillator strength with a high accuracy does not depend on the temperature in the range 8-90 K. The temperature dependence of the homogeneous broadening has been measured, and the inhomogeneous broadening of the resonance exciton line has been determined. A nonmonotonic dependence of the spectral broadening of the exciton line on the intensity of the resonant excitation at a temperature of 8 K has been revealed for the sample with a high-quality quantum well. It has been established that an increase in the excitation level by five orders of magnitude above the linear limit leads to an insignificant change in the oscillator strength of the excit

AB - A technique that makes it possible to investigate the mechanisms of phase relaxation of excitons in GaAs single quantum wells has been developed using resonant reflection spectroscopy. The dependence of the oscillator strength of the exciton transition on the quantum well thickness has been measured in the thickness range 9.1-30.0 nm. It has been demonstrated that the oscillator strength with a high accuracy does not depend on the temperature in the range 8-90 K. The temperature dependence of the homogeneous broadening has been measured, and the inhomogeneous broadening of the resonance exciton line has been determined. A nonmonotonic dependence of the spectral broadening of the exciton line on the intensity of the resonant excitation at a temperature of 8 K has been revealed for the sample with a high-quality quantum well. It has been established that an increase in the excitation level by five orders of magnitude above the linear limit leads to an insignificant change in the oscillator strength of the excit

KW - oscillator strength

KW - GaAs single quantum wells

KW - exciton resonance

KW - resonant reflection

KW - Brewster geometry

U2 - 10.1134/S1063783410090180

DO - 10.1134/S1063783410090180

M3 - Article

VL - 52

SP - 1899

EP - 1905

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 9

ER -

ID: 5046190