Standard

Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface. / Komolov, A.S.; Lazneva, E.F.; Gerasimova, N.B.; Panina, Y.A.; Baramygin, A.V.; Zashikhin, G.D.

в: Physics of the Solid State, Том 58, № 6, 2016, стр. 1257-1261.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Komolov, AS, Lazneva, EF, Gerasimova, NB, Panina, YA, Baramygin, AV & Zashikhin, GD 2016, 'Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface', Physics of the Solid State, Том. 58, № 6, стр. 1257-1261. https://doi.org/10.1134/S106378341606024X

APA

Komolov, A. S., Lazneva, E. F., Gerasimova, N. B., Panina, Y. A., Baramygin, A. V., & Zashikhin, G. D. (2016). Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface. Physics of the Solid State, 58(6), 1257-1261. https://doi.org/10.1134/S106378341606024X

Vancouver

Komolov AS, Lazneva EF, Gerasimova NB, Panina YA, Baramygin AV, Zashikhin GD. Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface. Physics of the Solid State. 2016;58(6):1257-1261. https://doi.org/10.1134/S106378341606024X

Author

Komolov, A.S. ; Lazneva, E.F. ; Gerasimova, N.B. ; Panina, Y.A. ; Baramygin, A.V. ; Zashikhin, G.D. / Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface. в: Physics of the Solid State. 2016 ; Том 58, № 6. стр. 1257-1261.

BibTeX

@article{60d78134301245928f3e46a460db1065,
title = "Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface",
abstract = "{\textcopyright} 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band in the energy range 5–25 eV above the Fermi level EF and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6–10 eV above the Fermi level EF) in which the energy states are determine",
author = "A.S. Komolov and E.F. Lazneva and N.B. Gerasimova and Y.A. Panina and A.V. Baramygin and G.D. Zashikhin",
year = "2016",
doi = "10.1134/S106378341606024X",
language = "English",
volume = "58",
pages = "1257--1261",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface

AU - Komolov, A.S.

AU - Lazneva, E.F.

AU - Gerasimova, N.B.

AU - Panina, Y.A.

AU - Baramygin, A.V.

AU - Zashikhin, G.D.

PY - 2016

Y1 - 2016

N2 - © 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band in the energy range 5–25 eV above the Fermi level EF and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6–10 eV above the Fermi level EF) in which the energy states are determine

AB - © 2016, Pleiades Publishing, Ltd.The results of the investigation of the electronic structure of the conduction band in the energy range 5–25 eV above the Fermi level EF and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6–10 eV above the Fermi level EF) in which the energy states are determine

U2 - 10.1134/S106378341606024X

DO - 10.1134/S106378341606024X

M3 - Article

VL - 58

SP - 1257

EP - 1261

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 6

ER -

ID: 7949997