Standard

Electrical properties of Si-Al2O3 structures grown by ML-ALE. / Drozd, V. E.; Baraban, A. P.; Nikiforova, I. O.

в: Applied Surface Science, Том 82-83, № C, 02.12.1994, стр. 583-586.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Drozd, VE, Baraban, AP & Nikiforova, IO 1994, 'Electrical properties of Si-Al2O3 structures grown by ML-ALE', Applied Surface Science, Том. 82-83, № C, стр. 583-586. https://doi.org/10.1016/0169-4332(94)90279-8

APA

Drozd, V. E., Baraban, A. P., & Nikiforova, I. O. (1994). Electrical properties of Si-Al2O3 structures grown by ML-ALE. Applied Surface Science, 82-83(C), 583-586. https://doi.org/10.1016/0169-4332(94)90279-8

Vancouver

Drozd VE, Baraban AP, Nikiforova IO. Electrical properties of Si-Al2O3 structures grown by ML-ALE. Applied Surface Science. 1994 Дек. 2;82-83(C):583-586. https://doi.org/10.1016/0169-4332(94)90279-8

Author

Drozd, V. E. ; Baraban, A. P. ; Nikiforova, I. O. / Electrical properties of Si-Al2O3 structures grown by ML-ALE. в: Applied Surface Science. 1994 ; Том 82-83, № C. стр. 583-586.

BibTeX

@article{cfcdcf8820304fcf955b77aceda068e7,
title = "Electrical properties of Si-Al2O3 structures grown by ML-ALE",
abstract = "Aluminum oxide films grown on silicon substrates by the ML-ALE method were studied. The structures were grown from trimethyl aluminum (TMA), H2O and NO2 at temperatures in the range of 150 to 310°C. These films were characterized by refracting index n = 1.68 + 0.02 (λ = 632.8 nm) and relative permittivity ε{lunate} = 5.3 + 0.2 (f = 1 MHz). Electro-physical characteristics of these layers were measured in metal-insulator-semiconductor (MIS) and electrolyte-insulator-semiconductor (EIS) systems. The threshold voltage of the MIS structure with Al gate was about 7.5 MV/cm. The Si-Al2O3 structures had both electron and hole traps. It was found that increasing the synthesis temperature leads to a decrease of the concentration of electron traps and to an increase of hole traps. So it was shown that the ML-ALE method made it possible to grow Si-Al2O3 structures similar to the well known Si-Si3N4 structures. Si-Al2O3 structures may be used in electronic devices.",
author = "Drozd, {V. E.} and Baraban, {A. P.} and Nikiforova, {I. O.}",
year = "1994",
month = dec,
day = "2",
doi = "10.1016/0169-4332(94)90279-8",
language = "English",
volume = "82-83",
pages = "583--586",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "C",

}

RIS

TY - JOUR

T1 - Electrical properties of Si-Al2O3 structures grown by ML-ALE

AU - Drozd, V. E.

AU - Baraban, A. P.

AU - Nikiforova, I. O.

PY - 1994/12/2

Y1 - 1994/12/2

N2 - Aluminum oxide films grown on silicon substrates by the ML-ALE method were studied. The structures were grown from trimethyl aluminum (TMA), H2O and NO2 at temperatures in the range of 150 to 310°C. These films were characterized by refracting index n = 1.68 + 0.02 (λ = 632.8 nm) and relative permittivity ε{lunate} = 5.3 + 0.2 (f = 1 MHz). Electro-physical characteristics of these layers were measured in metal-insulator-semiconductor (MIS) and electrolyte-insulator-semiconductor (EIS) systems. The threshold voltage of the MIS structure with Al gate was about 7.5 MV/cm. The Si-Al2O3 structures had both electron and hole traps. It was found that increasing the synthesis temperature leads to a decrease of the concentration of electron traps and to an increase of hole traps. So it was shown that the ML-ALE method made it possible to grow Si-Al2O3 structures similar to the well known Si-Si3N4 structures. Si-Al2O3 structures may be used in electronic devices.

AB - Aluminum oxide films grown on silicon substrates by the ML-ALE method were studied. The structures were grown from trimethyl aluminum (TMA), H2O and NO2 at temperatures in the range of 150 to 310°C. These films were characterized by refracting index n = 1.68 + 0.02 (λ = 632.8 nm) and relative permittivity ε{lunate} = 5.3 + 0.2 (f = 1 MHz). Electro-physical characteristics of these layers were measured in metal-insulator-semiconductor (MIS) and electrolyte-insulator-semiconductor (EIS) systems. The threshold voltage of the MIS structure with Al gate was about 7.5 MV/cm. The Si-Al2O3 structures had both electron and hole traps. It was found that increasing the synthesis temperature leads to a decrease of the concentration of electron traps and to an increase of hole traps. So it was shown that the ML-ALE method made it possible to grow Si-Al2O3 structures similar to the well known Si-Si3N4 structures. Si-Al2O3 structures may be used in electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=0028761992&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(94)90279-8

DO - 10.1016/0169-4332(94)90279-8

M3 - Article

AN - SCOPUS:0028761992

VL - 82-83

SP - 583

EP - 586

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -

ID: 42819485