Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Effect of image forces on electrons confined in low-dimensional structures under a magnetic field. / Dostov, V. L.; Zhanguo Wang, Wang.
в: Semiconductor Science and Technology, Том 9, № 10, 004, 01.12.1994, стр. 1781-1786.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Effect of image forces on electrons confined in low-dimensional structures under a magnetic field
AU - Dostov, V. L.
AU - Zhanguo Wang, Wang
PY - 1994/12/1
Y1 - 1994/12/1
N2 - We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in the well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.
AB - We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in the well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=0028524563&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/9/10/004
DO - 10.1088/0268-1242/9/10/004
M3 - Article
AN - SCOPUS:0028524563
VL - 9
SP - 1781
EP - 1786
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 004
ER -
ID: 39890601