Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

A.A. Pastor, U.V. Prokhorova, P.Y. Serdobintsev, V.V. Chaldyshev, M.A. Yagovkina

Результат исследований: Научные публикации в периодических изданияхстатья

9 Цитирования (Scopus)

Выдержка

GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. © 2013
Язык оригиналаанглийский
Страницы (с-по)1137-1140
ЖурналSemiconductors
Номер выпуска8
DOI
СостояниеОпубликовано - 2013

Отпечаток

Carrier lifetime
carrier lifetime
Charge carriers
charge carriers
Annealing
annealing
antisite defects
Defects
Arsenic
Point defects
Molecular beam epitaxy
arsenic
Temperature
Light absorption
point defects
Refractive index
optical absorption
molecular beam epitaxy
Metals
Pumps

Цитировать

Pastor, A. A., Prokhorova, U. V., Serdobintsev, P. Y., Chaldyshev, V. V., & Yagovkina, M. A. (2013). Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. Semiconductors, (8), 1137-1140. https://doi.org/10.1134/S1063782613080150
Pastor, A.A. ; Prokhorova, U.V. ; Serdobintsev, P.Y. ; Chaldyshev, V.V. ; Yagovkina, M.A. / Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. В: Semiconductors. 2013 ; № 8. стр. 1137-1140.
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abstract = "GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at {\%}. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. {\circledC} 2013",
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Pastor, AA, Prokhorova, UV, Serdobintsev, PY, Chaldyshev, VV & Yagovkina, MA 2013, 'Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures', Semiconductors, № 8, стр. 1137-1140. https://doi.org/10.1134/S1063782613080150

Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures. / Pastor, A.A.; Prokhorova, U.V.; Serdobintsev, P.Y.; Chaldyshev, V.V.; Yagovkina, M.A.

В: Semiconductors, № 8, 2013, стр. 1137-1140.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

AU - Pastor, A.A.

AU - Prokhorova, U.V.

AU - Serdobintsev, P.Y.

AU - Chaldyshev, V.V.

AU - Yagovkina, M.A.

PY - 2013

Y1 - 2013

N2 - GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. © 2013

AB - GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm-3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. © 2013

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DO - 10.1134/S1063782613080150

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JO - Semiconductors

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SN - 1063-7826

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