DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1

Результат исследований: Научные публикации в периодических изданияхстатьярецензирование

2 Цитирования (Scopus)

Аннотация

DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Devel- oped method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular struc- tures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.

Язык оригиналаанглийский
Страницы (с-по)566-571
Число страниц6
ЖурналProtection of Metals and Physical Chemistry of Surfaces
Том47
Номер выпуска5
DOI
СостояниеОпубликовано - сен 2011

Предметные области Scopus

  • Поверхности, слои и пленки
  • Органическая химия
  • Металлы и сплавы
  • Химия материалов

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