Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM

O. S. Medvedev, O. F. Vyvenko, E. V. Ubyivovk, S. V. Shapenkov, M. Seibt

Результат исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференции

Выдержка

Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same dislocation-rich region of the specimen with both TEM and CL-SEM and to establish direct correlation between the types of dislocations and their luminescent properties. It is shown that only straight segments of a-screw dislocations possess intrinsic luminescent band at 3.12 eV at room temperature confirming previous conclusion made from independent SEM and TEM results.

Язык оригиналаанглийский
Название основной публикацииState-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018
РедакторыYuri Petrov, Oleg Vyvenko
ИздательAmerican Institute of Physics
Том2064
ISBN (электронное издание)9780735417922
DOI
СостояниеОпубликовано - 15 янв 2019
СобытиеInternational Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018 - Moscow, Российская Федерация
Продолжительность: 17 окт 201819 окт 2018

Конференция

КонференцияInternational Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018
СтранаРоссийская Федерация
ГородMoscow
Период17/10/1819/10/18

Отпечаток

electron microscopes
luminescence
scanning
cathodoluminescence
screw dislocations
indentation
foils
preparation
room temperature

Предметные области Scopus

  • Физика и астрономия (все)

Цитировать

Medvedev, O. S., Vyvenko, O. F., Ubyivovk, E. V., Shapenkov, S. V., & Seibt, M. (2019). Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM. В Y. Petrov, & O. Vyvenko (Ред.), State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018 (Том 2064). [040003] American Institute of Physics. https://doi.org/10.1063/1.5087682
Medvedev, O. S. ; Vyvenko, O. F. ; Ubyivovk, E. V. ; Shapenkov, S. V. ; Seibt, M. / Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM. State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. редактор / Yuri Petrov ; Oleg Vyvenko. Том 2064 American Institute of Physics, 2019.
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title = "Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM",
abstract = "Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same dislocation-rich region of the specimen with both TEM and CL-SEM and to establish direct correlation between the types of dislocations and their luminescent properties. It is shown that only straight segments of a-screw dislocations possess intrinsic luminescent band at 3.12 eV at room temperature confirming previous conclusion made from independent SEM and TEM results.",
author = "Medvedev, {O. S.} and Vyvenko, {O. F.} and Ubyivovk, {E. V.} and Shapenkov, {S. V.} and M. Seibt",
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Medvedev, OS, Vyvenko, OF, Ubyivovk, EV, Shapenkov, SV & Seibt, M 2019, Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM. в Y Petrov & O Vyvenko (ред.), State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. том. 2064, 040003, American Institute of Physics, Moscow, Российская Федерация, 17/10/18. https://doi.org/10.1063/1.5087682

Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM. / Medvedev, O. S.; Vyvenko, O. F.; Ubyivovk, E. V.; Shapenkov, S. V.; Seibt, M.

State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. ред. / Yuri Petrov; Oleg Vyvenko. Том 2064 American Institute of Physics, 2019. 040003.

Результат исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференции

TY - GEN

T1 - Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM

AU - Medvedev, O. S.

AU - Vyvenko, O. F.

AU - Ubyivovk, E. V.

AU - Shapenkov, S. V.

AU - Seibt, M.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same dislocation-rich region of the specimen with both TEM and CL-SEM and to establish direct correlation between the types of dislocations and their luminescent properties. It is shown that only straight segments of a-screw dislocations possess intrinsic luminescent band at 3.12 eV at room temperature confirming previous conclusion made from independent SEM and TEM results.

AB - Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent TEM foil preparation enables to study the same dislocation-rich region of the specimen with both TEM and CL-SEM and to establish direct correlation between the types of dislocations and their luminescent properties. It is shown that only straight segments of a-screw dislocations possess intrinsic luminescent band at 3.12 eV at room temperature confirming previous conclusion made from independent SEM and TEM results.

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U2 - 10.1063/1.5087682

DO - 10.1063/1.5087682

M3 - Conference contribution

AN - SCOPUS:85060528066

VL - 2064

BT - State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018

A2 - Petrov, Yuri

A2 - Vyvenko, Oleg

PB - American Institute of Physics

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Medvedev OS, Vyvenko OF, Ubyivovk EV, Shapenkov SV, Seibt M. Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM. В Petrov Y, Vyvenko O, редакторы, State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018. Том 2064. American Institute of Physics. 2019. 040003 https://doi.org/10.1063/1.5087682