Control of the electrophysical properties of a semiconductor-electrolyte interface by means of directed proton transport

This article offers a consistent interpretation of the dynamic behavior of a real interface in measurements. The studied interface consists of a Ge-substrate with a monolayer of dipole molecules and a wet electrode. The gradual removal of protons from the SCR during long-term cyclic polarization of the interface with the blocking potential of the dipole layer shows that hydrogen in germanium exists in the proton form. Hereupon the balance of the electron and proton concentrations in SCR determines the value of the stationary potential, and the excess of the proton concentration over the equilibrium one corresponds to the density of surface states. The inertia of the proton transfer in the SCR with respect to the transfer of electrons and holes determines the screening conditions for the potential in SCR and, therefore, the features of the dynamics of the interface parameters. The enrichment of the surface with electrons facilitates the proton dissolution in the SCR and thereby compensates for the expected increase in interface capacitance due to the increase in accumulated charge. The experimentally confirmed effect of controlled dissolution of protons in the SCR opens the perspective of a new approach to the design of charge storage devices and techniques of electrocoating.