Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon

M. Trushin, A. Varlamov, A. Loshachenko, O. Vyvenko, M. Kittler

Результат исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференциинаучнаярецензирование

Выдержка

Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

Язык оригиналаанглийский
Номер статьи012005
ЖурналJournal of Physics: Conference Series
Том1190
Номер выпуска1
DOI
СостояниеОпубликовано - 23 мая 2019
Событие19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki, Греция
Продолжительность: 24 июн 201829 июн 2018

Предметные области Scopus

  • Физика и астрономия (все)

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abstract = "Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.",
author = "M. Trushin and A. Varlamov and A. Loshachenko and O. Vyvenko and M. Kittler",
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Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. / Trushin, M.; Varlamov, A.; Loshachenko, A.; Vyvenko, O.; Kittler, M.

В: Journal of Physics: Conference Series, Том 1190, № 1, 012005, 23.05.2019.

Результат исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференциинаучнаярецензирование

TY - JOUR

T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon

AU - Trushin, M.

AU - Varlamov, A.

AU - Loshachenko, A.

AU - Vyvenko, O.

AU - Kittler, M.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

AB - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

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