Cobalt-assisted recrystallization and alignment of pure and doped graphene

Dmitry Yu. Usachov, Kirill A. Bokai, Dmitry E. Marchenko, Alexander V. Fedorov, Viktor O. Shevelev, Oleg Yu. Vilkov, Elmar Yu. Kataev, Lada V. Yashina, Eckart Ruehl, Clemens Laubschat, Denis V. Vyalikh

Результат исследований: Научные публикации в периодических изданияхстатья

1 цитирование (Scopus)

Выдержка

Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the underlying mechanisms and the required conditions for recrystallization in low dimensions is essential for the elaboration of routes towards the inexpensive and reliable production of high-quality nanomaterials. Here, we unveil the details of the efficient recrystallization of one-atom-thick pure and boron-doped polycrystalline graphene layers on a Co(0001) surface. By applying photoemission and electron diffraction, we show how more than 90% of the initially misoriented graphene grains can be reconstructed into a well-oriented and single-crystalline layer. The obtained recrystallized graphene/Co interface exhibits high structural quality with a pronounced sublattice asymmetry, which is important for achieving an unbalanced sublattice doping of graphene. By exploring the kinetics of recrystallization for native and B-doped graphene on Co, we were able to estimate the activation energy and propose a mechanism of this process.

Язык оригиналаАнглийский
Страницы (с-по)12123-12132
Число страниц10
ЖурналNanoscale
Том10
Номер выпуска25
DOI
СостояниеОпубликовано - 7 июл 2018

Цитировать

Usachov, Dmitry Yu. ; Bokai, Kirill A. ; Marchenko, Dmitry E. ; Fedorov, Alexander V. ; Shevelev, Viktor O. ; Vilkov, Oleg Yu. ; Kataev, Elmar Yu. ; Yashina, Lada V. ; Ruehl, Eckart ; Laubschat, Clemens ; Vyalikh, Denis V. / Cobalt-assisted recrystallization and alignment of pure and doped graphene. В: Nanoscale. 2018 ; Том 10, № 25. стр. 12123-12132.
@article{bf3c7440e52c4768a0a92ce7c47ce62b,
title = "Cobalt-assisted recrystallization and alignment of pure and doped graphene",
abstract = "Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the underlying mechanisms and the required conditions for recrystallization in low dimensions is essential for the elaboration of routes towards the inexpensive and reliable production of high-quality nanomaterials. Here, we unveil the details of the efficient recrystallization of one-atom-thick pure and boron-doped polycrystalline graphene layers on a Co(0001) surface. By applying photoemission and electron diffraction, we show how more than 90{\%} of the initially misoriented graphene grains can be reconstructed into a well-oriented and single-crystalline layer. The obtained recrystallized graphene/Co interface exhibits high structural quality with a pronounced sublattice asymmetry, which is important for achieving an unbalanced sublattice doping of graphene. By exploring the kinetics of recrystallization for native and B-doped graphene on Co, we were able to estimate the activation energy and propose a mechanism of this process.",
keywords = "ATOMIC-STRUCTURE, GROWTH, SURFACES, NI(111), CARBON",
author = "Usachov, {Dmitry Yu.} and Bokai, {Kirill A.} and Marchenko, {Dmitry E.} and Fedorov, {Alexander V.} and Shevelev, {Viktor O.} and Vilkov, {Oleg Yu.} and Kataev, {Elmar Yu.} and Yashina, {Lada V.} and Eckart Ruehl and Clemens Laubschat and Vyalikh, {Denis V.}",
year = "2018",
month = "7",
day = "7",
doi = "10.1039/c8nr03183e",
language = "Английский",
volume = "10",
pages = "12123--12132",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "25",

}

Usachov, DY, Bokai, KA, Marchenko, DE, Fedorov, AV, Shevelev, VO, Vilkov, OY, Kataev, EY, Yashina, LV, Ruehl, E, Laubschat, C & Vyalikh, DV 2018, 'Cobalt-assisted recrystallization and alignment of pure and doped graphene', Nanoscale, том. 10, № 25, стр. 12123-12132. https://doi.org/10.1039/c8nr03183e

Cobalt-assisted recrystallization and alignment of pure and doped graphene. / Usachov, Dmitry Yu.; Bokai, Kirill A.; Marchenko, Dmitry E.; Fedorov, Alexander V.; Shevelev, Viktor O.; Vilkov, Oleg Yu.; Kataev, Elmar Yu.; Yashina, Lada V.; Ruehl, Eckart; Laubschat, Clemens; Vyalikh, Denis V.

В: Nanoscale, Том 10, № 25, 07.07.2018, стр. 12123-12132.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Cobalt-assisted recrystallization and alignment of pure and doped graphene

AU - Usachov, Dmitry Yu.

AU - Bokai, Kirill A.

AU - Marchenko, Dmitry E.

AU - Fedorov, Alexander V.

AU - Shevelev, Viktor O.

AU - Vilkov, Oleg Yu.

AU - Kataev, Elmar Yu.

AU - Yashina, Lada V.

AU - Ruehl, Eckart

AU - Laubschat, Clemens

AU - Vyalikh, Denis V.

PY - 2018/7/7

Y1 - 2018/7/7

N2 - Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the underlying mechanisms and the required conditions for recrystallization in low dimensions is essential for the elaboration of routes towards the inexpensive and reliable production of high-quality nanomaterials. Here, we unveil the details of the efficient recrystallization of one-atom-thick pure and boron-doped polycrystalline graphene layers on a Co(0001) surface. By applying photoemission and electron diffraction, we show how more than 90% of the initially misoriented graphene grains can be reconstructed into a well-oriented and single-crystalline layer. The obtained recrystallized graphene/Co interface exhibits high structural quality with a pronounced sublattice asymmetry, which is important for achieving an unbalanced sublattice doping of graphene. By exploring the kinetics of recrystallization for native and B-doped graphene on Co, we were able to estimate the activation energy and propose a mechanism of this process.

AB - Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the underlying mechanisms and the required conditions for recrystallization in low dimensions is essential for the elaboration of routes towards the inexpensive and reliable production of high-quality nanomaterials. Here, we unveil the details of the efficient recrystallization of one-atom-thick pure and boron-doped polycrystalline graphene layers on a Co(0001) surface. By applying photoemission and electron diffraction, we show how more than 90% of the initially misoriented graphene grains can be reconstructed into a well-oriented and single-crystalline layer. The obtained recrystallized graphene/Co interface exhibits high structural quality with a pronounced sublattice asymmetry, which is important for achieving an unbalanced sublattice doping of graphene. By exploring the kinetics of recrystallization for native and B-doped graphene on Co, we were able to estimate the activation energy and propose a mechanism of this process.

KW - ATOMIC-STRUCTURE

KW - GROWTH

KW - SURFACES

KW - NI(111)

KW - CARBON

U2 - 10.1039/c8nr03183e

DO - 10.1039/c8nr03183e

M3 - статья

VL - 10

SP - 12123

EP - 12132

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 25

ER -