Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

A.P. Baraban, A.A. Selivanov, V.A. Dmitriev, V.E. Drozd, A.V. Drozd

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.
Язык оригиналаанглийский
Страницы (с-по)255-257
ЖурналTechnical Physics Letters
Том45
Номер выпуска3
СостояниеОпубликовано - 26 мар 2019

Отпечаток

cathodoluminescence
electroforming
absorptivity
luminescence
oxides
defects
wavelengths

Цитировать

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abstract = "Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.",
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Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition. / Baraban, A.P.; Selivanov, A.A.; Dmitriev, V.A.; Drozd, V.E.; Drozd, A.V.

В: Technical Physics Letters, Том 45, № 3, 26.03.2019, стр. 255-257.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

AU - Baraban, A.P.

AU - Selivanov, A.A.

AU - Dmitriev, V.A.

AU - Drozd, V.E.

AU - Drozd, A.V.

PY - 2019/3/26

Y1 - 2019/3/26

N2 - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

AB - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

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UR - https://link.springer.com/article/10.1134/S1063785019030210

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