Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

A.P. Baraban, A.A. Selivanov, V.A. Dmitriev, V.E. Drozd, A.V. Drozd

Результат исследований: Научные публикации в периодических изданияхстатья

Аннотация

Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.
Язык оригиналаанглийский
Страницы (с-по)255-257
ЖурналTechnical Physics Letters
Том45
Номер выпуска3
СостояниеОпубликовано - 26 мар 2019

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