Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition

A. P. Baraban, A. A. Selivanov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

Use of the method of local cathodoluminescence in Si-TiO2 and Si-SiO2-TiO2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250-400 nm wavelength range in the external part of TiO2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO2 layer, and allows its bandgap width (3.3 eV) to be evaluated for the oxide layers formed by the given technology.

Язык оригиналаанглийский
Страницы (с-по)256-258
Число страниц3
ЖурналTechnical Physics Letters
Том45
Номер выпуска3
DOI
СостояниеОпубликовано - 1 мар 2019

Отпечаток

cathodoluminescence
electroforming
absorptivity
luminescence
oxides
defects
wavelengths

Предметные области Scopus

  • Физика и астрономия (разное)

Цитировать

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Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition. / Baraban, A. P.; Selivanov, A. A.; Dmitriev, V. A.; Drozd, A. V.; Drozd, V. E.

В: Technical Physics Letters, Том 45, № 3, 01.03.2019, стр. 256-258.

Результат исследований: Научные публикации в периодических изданияхстатья

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AU - Drozd, V. E.

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