Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal

L. Fernandez, A. A. Makarova, C. Laubschat, D. V. Vyalikh, D. Yu Usachov, J. E. Ortega, F. Schiller

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

Язык оригиналаанглийский
Номер статьи025013
Журнал2D Materials
Том6
Номер выпуска2
DOI
СостояниеОпубликовано - 8 фев 2019

Отпечаток

Boron nitride
boron nitrides
Monolayers
Crystals
crystals
Electronic properties
curved surfaces
boron nitride
Substrates
Photoelectron spectroscopy
Valence bands
Absorption spectroscopy
electronics
rigidity
Crystal lattices
Rigidity
Structural properties
flat surfaces
absorption spectroscopy
photoelectric emission

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Fernandez, L., Makarova, A. A., Laubschat, C., Vyalikh, D. V., Usachov, D. Y., Ortega, J. E., & Schiller, F. (2019). Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. 2D Materials, 6(2), [025013]. https://doi.org/10.1088/2053-1583/ab01e7
Fernandez, L. ; Makarova, A. A. ; Laubschat, C. ; Vyalikh, D. V. ; Usachov, D. Yu ; Ortega, J. E. ; Schiller, F. / Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. В: 2D Materials. 2019 ; Том 6, № 2.
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abstract = "The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.",
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Fernandez, L, Makarova, AA, Laubschat, C, Vyalikh, DV, Usachov, DY, Ortega, JE & Schiller, F 2019, 'Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal', 2D Materials, том. 6, № 2, 025013. https://doi.org/10.1088/2053-1583/ab01e7

Boron nitride monolayer growth on vicinal Ni(1 1 1) surfaces systematically studied with a curved crystal. / Fernandez, L.; Makarova, A. A.; Laubschat, C.; Vyalikh, D. V.; Usachov, D. Yu; Ortega, J. E.; Schiller, F.

В: 2D Materials, Том 6, № 2, 025013, 08.02.2019.

Результат исследований: Научные публикации в периодических изданияхстатья

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AU - Fernandez, L.

AU - Makarova, A. A.

AU - Laubschat, C.

AU - Vyalikh, D. V.

AU - Usachov, D. Yu

AU - Ortega, J. E.

AU - Schiller, F.

PY - 2019/2/8

Y1 - 2019/2/8

N2 - The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

AB - The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- A nd (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

KW - Boron nitride

KW - electronic properties

KW - III-V semiconductors

KW - Monolayers

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