Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition

Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, Harri Lipsanen

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<l100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

Язык оригиналаанглийский
Номер статьи406
ЖурналMaterials
Том12
Номер выпуска3
DOI
СостояниеОпубликовано - 28 янв 2019

Отпечаток

Aluminum nitride
Atomic layer deposition
Power electronics
Plasmas
Annealing
Organic Chemicals
Organic chemicals
Growth temperature
Nitrides
Chemical vapor deposition
Nucleation
Metals
Semiconductor materials
Crystalline materials
aluminum nitride
Substrates

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Seppänen, Heli ; Kim, Iurii ; Etula, Jarkko ; Ubyivovk, Evgeniy ; Bouravleuv, Alexei ; Lipsanen, Harri. / Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition. В: Materials. 2019 ; Том 12, № 3.
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Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition. / Seppänen, Heli; Kim, Iurii; Etula, Jarkko; Ubyivovk, Evgeniy; Bouravleuv, Alexei; Lipsanen, Harri.

В: Materials, Том 12, № 3, 406, 28.01.2019.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition

AU - Seppänen, Heli

AU - Kim, Iurii

AU - Etula, Jarkko

AU - Ubyivovk, Evgeniy

AU - Bouravleuv, Alexei

AU - Lipsanen, Harri

PY - 2019/1/28

Y1 - 2019/1/28

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KW - ALA

KW - ALD

KW - AlN

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KW - Regrowth

KW - Transition layer

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