A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

Alexander A. Koryakin, Sergey A. Kukushkin, Konstantin P. Kotlyar, Evgenii D. Ubyivovk, Rodion R. Reznik, George E. Cirlin

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

Язык оригиналаанглийский
Страницы (с-по)4707-4717
Число страниц11
ЖурналCrystEngComm
Том21
Номер выпуска32
DOI
СостояниеОпубликовано - 1 янв 2019

Отпечаток

Nanowires
nanowires
Temperature
catalysts
Molecular beam epitaxy
Catalysts
indium arsenide
Nucleation
Substrates
molecular beam epitaxy
Vapors
nucleation
vapors
Lattice mismatch
Arsenic
Growth temperature
Silicon
arsenic
Structural properties
Electronic equipment

Предметные области Scopus

  • Химия (все)
  • Материаловедение (все)
  • Физика конденсатов

Цитировать

Koryakin, A. A., Kukushkin, S. A., Kotlyar, K. P., Ubyivovk, E. D., Reznik, R. R., & Cirlin, G. E. (2019). A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. CrystEngComm, 21(32), 4707-4717. https://doi.org/10.1039/c9ce00774a
Koryakin, Alexander A. ; Kukushkin, Sergey A. ; Kotlyar, Konstantin P. ; Ubyivovk, Evgenii D. ; Reznik, Rodion R. ; Cirlin, George E. / A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. В: CrystEngComm. 2019 ; Том 21, № 32. стр. 4707-4717.
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abstract = "We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.",
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Koryakin, AA, Kukushkin, SA, Kotlyar, KP, Ubyivovk, ED, Reznik, RR & Cirlin, GE 2019, 'A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires', CrystEngComm, том. 21, № 32, стр. 4707-4717. https://doi.org/10.1039/c9ce00774a

A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. / Koryakin, Alexander A.; Kukushkin, Sergey A.; Kotlyar, Konstantin P.; Ubyivovk, Evgenii D.; Reznik, Rodion R.; Cirlin, George E.

В: CrystEngComm, Том 21, № 32, 01.01.2019, стр. 4707-4717.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

AU - Koryakin, Alexander A.

AU - Kukushkin, Sergey A.

AU - Kotlyar, Konstantin P.

AU - Ubyivovk, Evgenii D.

AU - Reznik, Rodion R.

AU - Cirlin, George E.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

AB - We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor-solid-solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor-solid-solid growth of III-V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III-V semiconductors with silicon electronics.

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U2 - 10.1039/c9ce00774a

DO - 10.1039/c9ce00774a

M3 - Article

AN - SCOPUS:85070642367

VL - 21

SP - 4707

EP - 4717

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 32

ER -

Koryakin AA, Kukushkin SA, Kotlyar KP, Ubyivovk ED, Reznik RR, Cirlin GE. A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires. CrystEngComm. 2019 Янв. 1;21(32):4707-4717. https://doi.org/10.1039/c9ce00774a