Angle resolved photoelectron spectroscopy as applied to X-ray mirrors: an in depth study of Mo/ Si multilayer systems

Переведенное название: Фотоэлектронная спектроскопия применительно к послойному изучению Mo/ Si многослойного рентгеновского зеркала

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

We present approach adapted to study the interface (composition and extension) of the X-ray multilayer mirror using angular resolved photoelectron spectroscopy (ARXPS). In the approach we rely on the concept of average effective attenuation length L (EAL) of the photoelectron and not on the inelastic mean free path λ_i (IMPF) that allows us to take into account the contribution of elastically scattered electrons and to increase the accuracy of the determined thickness of layers. We apply the developed approach to study the formation of interfaces in the multilayer periodic Mo/Si mirror. Chemical composition and significance of the interfaces depending on the number of periods were investigated by means of ARXPS spectra decomposition technique. Formation of molybdenum silicide MoSi2 at the interfaces was revealed. It was shown that molybdenum silicide with different thickness is formed at the interfaces depending on the films order. In addition, it was established that increasing of periods number of the [Mo/Si] system leads to a decrease of the interface extension.
Язык оригиналаанглийский
Число страниц13
ЖурналPhysical Chemistry Chemical Physics
СостояниеЭлектронная публикация перед печатью - 7 ноя 2019

Отпечаток

Molybdenum
Photoelectron spectroscopy
Multilayers
Mirrors
photoelectron spectroscopy
mirrors
X rays
Photoelectrons
Chemical analysis
x rays
Decomposition
molybdenum
Electrons
mean free path
chemical composition
photoelectrons
attenuation
decomposition
electrons

Цитировать

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title = "Angle resolved photoelectron spectroscopy as applied to X-ray mirrors: an in depth study of Mo/ Si multilayer systems",
abstract = "We present approach adapted to study the interface (composition and extension) of the X-ray multilayer mirror using angular resolved photoelectron spectroscopy (ARXPS). In the approach we rely on the concept of average effective attenuation length L (EAL) of the photoelectron and not on the inelastic mean free path λ_i (IMPF) that allows us to take into account the contribution of elastically scattered electrons and to increase the accuracy of the determined thickness of layers. We apply the developed approach to study the formation of interfaces in the multilayer periodic Mo/Si mirror. Chemical composition and significance of the interfaces depending on the number of periods were investigated by means of ARXPS spectra decomposition technique. Formation of molybdenum silicide MoSi2 at the interfaces was revealed. It was shown that molybdenum silicide with different thickness is formed at the interfaces depending on the films order. In addition, it was established that increasing of periods number of the [Mo/Si] system leads to a decrease of the interface extension.",
author = "Sergei Sakhonenkov and Filatova, {Elena O.} and Gaisin, {Aidar U.} and Kasatikov, {Sergey A.} and Konashuk, {Aleksei S.} and Pleshkov, {Roman S.} and Chkhalo, {Nikolai I.}",
year = "2019",
month = "11",
day = "7",
language = "English",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",

}

Angle resolved photoelectron spectroscopy as applied to X-ray mirrors: an in depth study of Mo/ Si multilayer systems. / Sakhonenkov, Sergei ; Filatova, Elena O. ; Gaisin, Aidar U. ; Kasatikov, Sergey A.; Konashuk, Aleksei S.; Pleshkov, Roman S.; Chkhalo, Nikolai I. .

В: Physical Chemistry Chemical Physics, 07.11.2019.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Angle resolved photoelectron spectroscopy as applied to X-ray mirrors: an in depth study of Mo/ Si multilayer systems

AU - Sakhonenkov, Sergei

AU - Filatova, Elena O.

AU - Gaisin, Aidar U.

AU - Kasatikov, Sergey A.

AU - Konashuk, Aleksei S.

AU - Pleshkov, Roman S.

AU - Chkhalo, Nikolai I.

PY - 2019/11/7

Y1 - 2019/11/7

N2 - We present approach adapted to study the interface (composition and extension) of the X-ray multilayer mirror using angular resolved photoelectron spectroscopy (ARXPS). In the approach we rely on the concept of average effective attenuation length L (EAL) of the photoelectron and not on the inelastic mean free path λ_i (IMPF) that allows us to take into account the contribution of elastically scattered electrons and to increase the accuracy of the determined thickness of layers. We apply the developed approach to study the formation of interfaces in the multilayer periodic Mo/Si mirror. Chemical composition and significance of the interfaces depending on the number of periods were investigated by means of ARXPS spectra decomposition technique. Formation of molybdenum silicide MoSi2 at the interfaces was revealed. It was shown that molybdenum silicide with different thickness is formed at the interfaces depending on the films order. In addition, it was established that increasing of periods number of the [Mo/Si] system leads to a decrease of the interface extension.

AB - We present approach adapted to study the interface (composition and extension) of the X-ray multilayer mirror using angular resolved photoelectron spectroscopy (ARXPS). In the approach we rely on the concept of average effective attenuation length L (EAL) of the photoelectron and not on the inelastic mean free path λ_i (IMPF) that allows us to take into account the contribution of elastically scattered electrons and to increase the accuracy of the determined thickness of layers. We apply the developed approach to study the formation of interfaces in the multilayer periodic Mo/Si mirror. Chemical composition and significance of the interfaces depending on the number of periods were investigated by means of ARXPS spectra decomposition technique. Formation of molybdenum silicide MoSi2 at the interfaces was revealed. It was shown that molybdenum silicide with different thickness is formed at the interfaces depending on the films order. In addition, it was established that increasing of periods number of the [Mo/Si] system leads to a decrease of the interface extension.

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