Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

Переведенное название: Ограничение вымывания кислорода на границе TiN/SiO2 путем введения тонкого слоя Al2O3

Результат исследований: Научные публикации в периодических изданияхстатья

Выдержка

Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.

Язык оригиналаанглийский
Страницы (с-по)22335-22344
ЖурналJournal of Physical Chemistry C
Том123
DOI
СостояниеЭлектронная публикация перед печатью - 15 авг 2019

Отпечаток

Aluminum Oxide
Scavenging
scavenging
interlayers
Alumina
Oxygen
oxygen
aluminum oxides
Silicates
Oxidation
Aluminosilicates
Silicon oxides
X ray absorption
Oxygen vacancies
Photoelectron spectroscopy
insertion
Photoelectrons
Titanium
Kinetic energy
Vapors

Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Энергия (все)
  • Физическая и теоретическая химия
  • Поверхности, слои и пленки

Цитировать

@article{f7151f6439ea429984916e0cc65f778a,
title = "Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer",
abstract = "Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.",
author = "Filatova, {Elena O.} and Sakhonenkov, {Sergei S.} and Konashuk, {Aleksei S.} and Kasatikov, {Sergey A.} and Afanas'ev, {Valeri V.}",
year = "2019",
month = "8",
day = "15",
doi = "10.1021/acs.jpcc.9b05800",
language = "English",
volume = "123",
pages = "22335--22344",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",

}

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer. / Filatova, Elena O.; Sakhonenkov, Sergei S.; Konashuk, Aleksei S.; Kasatikov, Sergey A.; Afanas'ev, Valeri V.

В: Journal of Physical Chemistry C, Том 123, 15.08.2019, стр. 22335-22344.

Результат исследований: Научные публикации в периодических изданияхстатья

TY - JOUR

T1 - Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

AU - Filatova, Elena O.

AU - Sakhonenkov, Sergei S.

AU - Konashuk, Aleksei S.

AU - Kasatikov, Sergey A.

AU - Afanas'ev, Valeri V.

PY - 2019/8/15

Y1 - 2019/8/15

N2 - Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.

AB - Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.

UR - http://www.scopus.com/inward/record.url?scp=85072575548&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.9b05800

DO - 10.1021/acs.jpcc.9b05800

M3 - Article

AN - SCOPUS:85072575548

VL - 123

SP - 22335

EP - 22344

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

ER -