Hexagonal boron nitride (h-BN) is one of wide-band-gap semiconductors.
This material is a promising material for the production of single photon emitters. To study luminescence properties of native defects and ion-induced defects in h-BN we use cathodoluminescence (CL) method.We found that the ion beam has a significant influence on the intensity of CL. A comparison of the experimental results and numerical simulation (with the Monte-
Carlo method) shows that ion irradiation leads to the appearance of nonradiative
recombination centers.