Tunnel Injection and Power Efficiency of InGaN/GaN Light-Emitting Diodes

N.I. Bochkareva, V.V. Voronenkov, R.I. Gorbunov, P.E. Latyshev, Yu.S. Lelikov, Yu.T. Rebane, A.I. Tsuk, Yu.G. Shreter

Research output

11 Citations (Scopus)


The results of studying the influence of the finite tunneling transparency of injection barriers in light-emitting diodes with InGaN/GaN quantum wells on the dependences of the current, capacitance, and quantum efficiency on the p-n junction voltage and temperature are presented. It is shown that defectassisted hopping tunneling is the main transport mechanism through the space charge region (SCR) and makes it possible to lower the injection barrier. It is shown that, in the case of high hopping conductivity through the injection barrier, the tunnel-injection current into InGaN band-tail states is limited only by carrier diffusion from neutral regions and is characterized by a close-to-unity ideality factor, which provides the highest quantum and power efficiencies. An increase in the hopping conductivity through the space charge region with increasing frequency, forward bias, or temperature has a decisive effect on the capacitance-voltage characteristics and temperature dependences of the high-frequency capa
Original languageEnglish
Pages (from-to)127-134
Issue number1
Publication statusPublished - 2013
Externally publishedYes

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    Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsuk, A. I., & Shreter, Y. G. (2013). Tunnel Injection and Power Efficiency of InGaN/GaN Light-Emitting Diodes. Semiconductors, 47(1), 127-134. https://doi.org/DOI:10.1134/S1063782613010089