Abstract
The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.
| Original language | English |
|---|---|
| Article number | 063035 |
| Journal | New Journal of Physics |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Jun 2018 |
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Scopus subject areas
- Physics and Astronomy(all)
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Topological states induced by local structural modification of the polar BiTeI(0001) surface. / Fiedler, Sebastian; Eremeev, Sergey V.; Golyashov, Vladimir A.; Kaveev, Andrey K.; Tereshchenko, Oleg E.; Kokh, Konstantin A.; Chulkov, Evgueni V.; Bentmann, Hendrik; Reinert, Friedrich.
In: New Journal of Physics, Vol. 20, No. 6, 063035, 01.06.2018.Research output
TY - JOUR
T1 - Topological states induced by local structural modification of the polar BiTeI(0001) surface
AU - Fiedler, Sebastian
AU - Eremeev, Sergey V.
AU - Golyashov, Vladimir A.
AU - Kaveev, Andrey K.
AU - Tereshchenko, Oleg E.
AU - Kokh, Konstantin A.
AU - Chulkov, Evgueni V.
AU - Bentmann, Hendrik
AU - Reinert, Friedrich
PY - 2018/6/1
Y1 - 2018/6/1
N2 - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.
AB - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.
KW - Rashba effect
KW - spin-orbit interaction at surfaces
KW - topological insulator
UR - http://www.scopus.com/inward/record.url?scp=85049384379&partnerID=8YFLogxK
U2 - 10.1088/1367-2630/aac75e
DO - 10.1088/1367-2630/aac75e
M3 - Article
AN - SCOPUS:85049384379
VL - 20
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
IS - 6
M1 - 063035
ER -