Topological states induced by local structural modification of the polar BiTeI(0001) surface

Sebastian Fiedler, Sergey V. Eremeev, Vladimir A. Golyashov, Andrey K. Kaveev, Oleg E. Tereshchenko, Konstantin A. Kokh, Evgueni V. Chulkov, Hendrik Bentmann, Friedrich Reinert

Research output

2 Citations (Scopus)

Abstract

The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

Original languageEnglish
Article number063035
JournalNew Journal of Physics
Volume20
Issue number6
DOIs
Publication statusPublished - 1 Jun 2018

Fingerprint

electronic structure
annealing
scanning tunneling microscopy
manipulators
stoichiometry
photoelectric emission
textures
orbits
vacuum

Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Topological states induced by local structural modification of the polar BiTeI(0001) surface",
abstract = "The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.",
keywords = "Rashba effect, spin-orbit interaction at surfaces, topological insulator",
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Topological states induced by local structural modification of the polar BiTeI(0001) surface. / Fiedler, Sebastian; Eremeev, Sergey V.; Golyashov, Vladimir A.; Kaveev, Andrey K.; Tereshchenko, Oleg E.; Kokh, Konstantin A.; Chulkov, Evgueni V.; Bentmann, Hendrik; Reinert, Friedrich.

In: New Journal of Physics, Vol. 20, No. 6, 063035, 01.06.2018.

Research output

TY - JOUR

T1 - Topological states induced by local structural modification of the polar BiTeI(0001) surface

AU - Fiedler, Sebastian

AU - Eremeev, Sergey V.

AU - Golyashov, Vladimir A.

AU - Kaveev, Andrey K.

AU - Tereshchenko, Oleg E.

AU - Kokh, Konstantin A.

AU - Chulkov, Evgueni V.

AU - Bentmann, Hendrik

AU - Reinert, Friedrich

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

AB - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

KW - Rashba effect

KW - spin-orbit interaction at surfaces

KW - topological insulator

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