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Three stages of Si transformation into SiC by the method of coordinated substitution of atoms. / Кукушкин, Сергей Арсеньевич; Убыйвовк, Евгений Викторович; Воробьёв, М.Г.; Grashchenko, Aleksandr S.; Осипов, А.В.

In: Thin Solid Films, Vol. 839, 140908, 01.04.2026.

Research output: Contribution to journal › Article › peer-review

Harvard

Кукушкин, СА, Убыйвовк, ЕВ, Воробьёв, МГ, Grashchenko, AS & Осипов, АВ 2026, 'Three stages of Si transformation into SiC by the method of coordinated substitution of atoms', Thin Solid Films, vol. 839, 140908. https://doi.org/10.1016/j.tsf.2026.140908

APA

Кукушкин, С. А., Убыйвовк, Е. В., Воробьёв, М. Г., Grashchenko, A. S., & Осипов, А. В. (2026). Three stages of Si transformation into SiC by the method of coordinated substitution of atoms. Thin Solid Films, 839, [140908]. https://doi.org/10.1016/j.tsf.2026.140908

Vancouver

Кукушкин СА, Убыйвовк ЕВ, Воробьёв МГ, Grashchenko AS, Осипов АВ. Three stages of Si transformation into SiC by the method of coordinated substitution of atoms. Thin Solid Films. 2026 Apr 1;839. 140908. https://doi.org/10.1016/j.tsf.2026.140908

Author

Кукушкин, Сергей Арсеньевич ; Убыйвовк, Евгений Викторович ; Воробьёв, М.Г. ; Grashchenko, Aleksandr S. ; Осипов, А.В. / Three stages of Si transformation into SiC by the method of coordinated substitution of atoms. In: Thin Solid Films. 2026 ; Vol. 839.

BibTeX

@article{10ab4b2e06b745a39b3b352f269b573f,
title = "Three stages of Si transformation into SiC by the method of coordinated substitution of atoms",
abstract = "The mechanism of the sequential stages of the heterogeneous chemical reaction between gaseous carbon monoxide and the surface of monocrystalline silicon is investigated. As a result of this reaction, the silicon surface is transformed into an epitaxial silicon carbide surface. A significant time-dependent change in the microstructure and properties of the forming SiC layers has been observed. The microstructure and properties of the SiC/Si layers were analyzed using reflection high-energy electron diffraction (RHEED) and spectroscopic ellipsometry (SE), while the evolution of the SiC–Si interfacial structure was studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It has been established that during the first five minutes of synthesis the elastic strain transitions from compressive to tensile. It was observed that the “precarbide” layer consists of twinned ordered layers located parallel to the interface in the (111) plane, with a period of 0.252 nm and a triple periodicity, i.e., with a spacing of 0.756 nm.",
keywords = "Elastic strains, Heterogeneous reactions, Microstructure evolution, Nanostructures, Silicon carbide on silicon, Silicon carbide synthesis",
author = "Кукушкин, {Сергей Арсеньевич} and Убыйвовк, {Евгений Викторович} and М.Г. Воробьёв and Grashchenko, {Aleksandr S.} and А.В. Осипов",
year = "2026",
month = apr,
day = "1",
doi = "10.1016/j.tsf.2026.140908",
language = "English",
volume = "839",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Three stages of Si transformation into SiC by the method of coordinated substitution of atoms

AU - Кукушкин, Сергей Арсеньевич

AU - Убыйвовк, Евгений Викторович

AU - Воробьёв, М.Г.

AU - Grashchenko, Aleksandr S.

AU - Осипов, А.В.

PY - 2026/4/1

Y1 - 2026/4/1

N2 - The mechanism of the sequential stages of the heterogeneous chemical reaction between gaseous carbon monoxide and the surface of monocrystalline silicon is investigated. As a result of this reaction, the silicon surface is transformed into an epitaxial silicon carbide surface. A significant time-dependent change in the microstructure and properties of the forming SiC layers has been observed. The microstructure and properties of the SiC/Si layers were analyzed using reflection high-energy electron diffraction (RHEED) and spectroscopic ellipsometry (SE), while the evolution of the SiC–Si interfacial structure was studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It has been established that during the first five minutes of synthesis the elastic strain transitions from compressive to tensile. It was observed that the “precarbide” layer consists of twinned ordered layers located parallel to the interface in the (111) plane, with a period of 0.252 nm and a triple periodicity, i.e., with a spacing of 0.756 nm.

AB - The mechanism of the sequential stages of the heterogeneous chemical reaction between gaseous carbon monoxide and the surface of monocrystalline silicon is investigated. As a result of this reaction, the silicon surface is transformed into an epitaxial silicon carbide surface. A significant time-dependent change in the microstructure and properties of the forming SiC layers has been observed. The microstructure and properties of the SiC/Si layers were analyzed using reflection high-energy electron diffraction (RHEED) and spectroscopic ellipsometry (SE), while the evolution of the SiC–Si interfacial structure was studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It has been established that during the first five minutes of synthesis the elastic strain transitions from compressive to tensile. It was observed that the “precarbide” layer consists of twinned ordered layers located parallel to the interface in the (111) plane, with a period of 0.252 nm and a triple periodicity, i.e., with a spacing of 0.756 nm.

KW - Elastic strains

KW - Heterogeneous reactions

KW - Microstructure evolution

KW - Nanostructures

KW - Silicon carbide on silicon

KW - Silicon carbide synthesis

UR - https://www.mendeley.com/catalogue/2baea813-c325-3c0f-ba41-9eae5e251da2/

UR - https://www.scopus.com/pages/publications/105034259736

U2 - 10.1016/j.tsf.2026.140908

DO - 10.1016/j.tsf.2026.140908

M3 - Article

VL - 839

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

M1 - 140908

ER -

ID: 150939261