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Theoretical treatment of A3B5 chloride vapour-phase epitaxy : Growth, doping, optimization. / Dostov, V. L.; Ipatova, I. P.; Yu Kulikov, A.; Zhyliaev, Yu V.

In: Semiconductor Science and Technology, Vol. 8, No. 11, 002, 01.12.1993, p. 1935-1943.

Research output: Contribution to journal › Article › peer-review

Harvard

Dostov, VL, Ipatova, IP, Yu Kulikov, A & Zhyliaev, YV 1993, 'Theoretical treatment of A3B5 chloride vapour-phase epitaxy: Growth, doping, optimization', Semiconductor Science and Technology, vol. 8, no. 11, 002, pp. 1935-1943. https://doi.org/10.1088/0268-1242/8/11/002

APA

Dostov, V. L., Ipatova, I. P., Yu Kulikov, A., & Zhyliaev, Y. V. (1993). Theoretical treatment of A3B5 chloride vapour-phase epitaxy: Growth, doping, optimization. Semiconductor Science and Technology, 8(11), 1935-1943. [002]. https://doi.org/10.1088/0268-1242/8/11/002

Vancouver

Dostov VL, Ipatova IP, Yu Kulikov A, Zhyliaev YV. Theoretical treatment of A3B5 chloride vapour-phase epitaxy: Growth, doping, optimization. Semiconductor Science and Technology. 1993 Dec 1;8(11):1935-1943. 002. https://doi.org/10.1088/0268-1242/8/11/002

Author

Dostov, V. L. ; Ipatova, I. P. ; Yu Kulikov, A. ; Zhyliaev, Yu V. / Theoretical treatment of A3B5 chloride vapour-phase epitaxy : Growth, doping, optimization. In: Semiconductor Science and Technology. 1993 ; Vol. 8, No. 11. pp. 1935-1943.

BibTeX

@article{6d45306328aa46fa8326ba2d0b1722b0,
title = "Theoretical treatment of A3B5 chloride vapour-phase epitaxy: Growth, doping, optimization",
abstract = "A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.",
author = "Dostov, {V. L.} and Ipatova, {I. P.} and {Yu Kulikov}, A. and Zhyliaev, {Yu V.}",
year = "1993",
month = dec,
day = "1",
doi = "10.1088/0268-1242/8/11/002",
language = "English",
volume = "8",
pages = "1935--1943",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

RIS

TY - JOUR

T1 - Theoretical treatment of A3B5 chloride vapour-phase epitaxy

T2 - Growth, doping, optimization

AU - Dostov, V. L.

AU - Ipatova, I. P.

AU - Yu Kulikov, A.

AU - Zhyliaev, Yu V.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

AB - A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

UR - http://www.scopus.com/inward/record.url?scp=0027699136&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/8/11/002

DO - 10.1088/0268-1242/8/11/002

M3 - Article

AN - SCOPUS:0027699136

VL - 8

SP - 1935

EP - 1943

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 002

ER -

ID: 39890827