The role of surface atomic structures in photoluminescence of porous silicon

Research output

Abstract

The effect of surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) has been studied by methods of photo-luminescent, UV photoelectron, IR Fourier-transform spectroscopies, and mass-spectrometry. The luminescence spectra of por-Si free from carbon-containing contaminants exhibit two emission bands (hvmax = 1.81 and 1.95 eV) due to the electron-hole radiative recombination on surface states with the energy of 1.75 and 2.0 eV below the Fermi level. These states are associated with silicon hydride groups SiHn (n = 1-3). The replacement of these groups by oxyhydride OxSi-H and Si-O-Si structures gives the non-radiative recombination centers of dangling bond type with the energy level of 1.0 eV below EF, thus attenuating or quenching the photoluminescence.

Original languageEnglish
Pages (from-to)71-78
Number of pages8
JournalPhysics of Low-Dimensional Structures
Volume1-2
Publication statusPublished - 12 Sep 2002

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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