The effect of surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) has been studied by methods of photo-luminescent, UV photoelectron, IR Fourier-transform spectroscopies, and mass-spectrometry. The luminescence spectra of por-Si free from carbon-containing contaminants exhibit two emission bands (hvmax = 1.81 and 1.95 eV) due to the electron-hole radiative recombination on surface states with the energy of 1.75 and 2.0 eV below the Fermi level. These states are associated with silicon hydride groups SiHn (n = 1-3). The replacement of these groups by oxyhydride OxSi-H and Si-O-Si structures gives the non-radiative recombination centers of dangling bond type with the energy level of 1.0 eV below EF, thus attenuating or quenching the photoluminescence.
|Number of pages||8|
|Journal||Physics of Low-Dimensional Structures|
|Publication status||Published - 12 Sep 2002|
Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics