The role of surface atomic structures in photoluminescence of porous silicon

Research output


The effect of surface atomic structures on the electron spectrum and luminescent properties of porous silicon (por-Si) has been studied by methods of photo-luminescent, UV photoelectron, IR Fourier-transform spectroscopies, and mass-spectrometry. The luminescence spectra of por-Si free from carbon-containing contaminants exhibit two emission bands (hvmax = 1.81 and 1.95 eV) due to the electron-hole radiative recombination on surface states with the energy of 1.75 and 2.0 eV below the Fermi level. These states are associated with silicon hydride groups SiHn (n = 1-3). The replacement of these groups by oxyhydride OxSi-H and Si-O-Si structures gives the non-radiative recombination centers of dangling bond type with the energy level of 1.0 eV below EF, thus attenuating or quenching the photoluminescence.

Original languageEnglish
Pages (from-to)71-78
Number of pages8
JournalPhysics of Low-Dimensional Structures
Publication statusPublished - 12 Sep 2002

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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