Abstract: The luminescence photodynamics of an array of InP/InAsP/InP nanowires formed via molecular beam epitaxy onto a Si(III) substrate is investigated in this work. Using several kinetic models, the experimental data acquired by a 633-nm room-temperature laser excitation have been analyzed. The kinetics of luminescence decay of the InAsP nanoinsert is shown to be best described in the context of the model of contact quenching. The total time of decay of the excited state (the radiative lifetime) of the InAsP nanoinsert is estimated to be τ ~ 40 ns. The reasons of unexpectedly long duration of the excitation transfer from InP are discussed as well.
Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics