The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon

Andrey V. Soukhorukov, Davud V. Guseinov, Alexei V. Kudrin, Sergey A. Popkov, Alexandra P. Detochenko, Alexandra V. Koroleva, Alexander A. Ezhevskii, Anton A. Konakov, Nikolai V. Abrosimov, Helge Riemann

Research output

1 Citation (Scopus)

Abstract

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XVI
EditorsPeter Pichler, Peter Pichler
PublisherTrans Tech Publications Ltd
Pages327-331
Number of pages5
ISBN (Print)9783038356080
DOIs
Publication statusPublished - 1 Jan 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein
Duration: 20 Sep 201525 Sep 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Electronic)1662-9779

Conference

Conference16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period20/09/1525/09/15

Fingerprint

Bismuth
spin resonance
Silicon
conduction electrons
bismuth
Scattering
Impurities
impurities
Electrons
Hall effect
silicon
Magnetoresistance
scattering
Electron spin resonance spectroscopy
Hall resistance
electron spin
low concentrations
electron paramagnetic resonance
Magnetic fields
deviation

Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Soukhorukov, A. V., Guseinov, D. V., Kudrin, A. V., Popkov, S. A., Detochenko, A. P., Koroleva, A. V., ... Riemann, H. (2016). The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. In P. Pichler, & P. Pichler (Eds.), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 327-331). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.327
Soukhorukov, Andrey V. ; Guseinov, Davud V. ; Kudrin, Alexei V. ; Popkov, Sergey A. ; Detochenko, Alexandra P. ; Koroleva, Alexandra V. ; Ezhevskii, Alexander A. ; Konakov, Anton A. ; Abrosimov, Nikolai V. ; Riemann, Helge. / The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. Gettering and Defect Engineering in Semiconductor Technology XVI. editor / Peter Pichler ; Peter Pichler. Trans Tech Publications Ltd, 2016. pp. 327-331 (Solid State Phenomena).
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abstract = "Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.",
keywords = "Conduction electrons, Electron paramagnetic resonance, Magnetoresistance, Spin relaxation, Spin-dependent scattering, Spin-orbit coupling",
author = "Soukhorukov, {Andrey V.} and Guseinov, {Davud V.} and Kudrin, {Alexei V.} and Popkov, {Sergey A.} and Detochenko, {Alexandra P.} and Koroleva, {Alexandra V.} and Ezhevskii, {Alexander A.} and Konakov, {Anton A.} and Abrosimov, {Nikolai V.} and Helge Riemann",
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Soukhorukov, AV, Guseinov, DV, Kudrin, AV, Popkov, SA, Detochenko, AP, Koroleva, AV, Ezhevskii, AA, Konakov, AA, Abrosimov, NV & Riemann, H 2016, The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. in P Pichler & P Pichler (eds), Gettering and Defect Engineering in Semiconductor Technology XVI. Solid State Phenomena, vol. 242, Trans Tech Publications Ltd, pp. 327-331, Bad Staffelstein, 20/09/15. https://doi.org/10.4028/www.scientific.net/SSP.242.327

The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. / Soukhorukov, Andrey V.; Guseinov, Davud V.; Kudrin, Alexei V.; Popkov, Sergey A.; Detochenko, Alexandra P.; Koroleva, Alexandra V.; Ezhevskii, Alexander A.; Konakov, Anton A.; Abrosimov, Nikolai V.; Riemann, Helge.

Gettering and Defect Engineering in Semiconductor Technology XVI. ed. / Peter Pichler; Peter Pichler. Trans Tech Publications Ltd, 2016. p. 327-331 (Solid State Phenomena; Vol. 242).

Research output

TY - GEN

T1 - The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon

AU - Soukhorukov, Andrey V.

AU - Guseinov, Davud V.

AU - Kudrin, Alexei V.

AU - Popkov, Sergey A.

AU - Detochenko, Alexandra P.

AU - Koroleva, Alexandra V.

AU - Ezhevskii, Alexander A.

AU - Konakov, Anton A.

AU - Abrosimov, Nikolai V.

AU - Riemann, Helge

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

AB - Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

KW - Conduction electrons

KW - Electron paramagnetic resonance

KW - Magnetoresistance

KW - Spin relaxation

KW - Spin-dependent scattering

KW - Spin-orbit coupling

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U2 - 10.4028/www.scientific.net/SSP.242.327

DO - 10.4028/www.scientific.net/SSP.242.327

M3 - Conference contribution

AN - SCOPUS:84953888919

SN - 9783038356080

T3 - Solid State Phenomena

SP - 327

EP - 331

BT - Gettering and Defect Engineering in Semiconductor Technology XVI

A2 - Pichler, Peter

A2 - Pichler, Peter

PB - Trans Tech Publications Ltd

ER -

Soukhorukov AV, Guseinov DV, Kudrin AV, Popkov SA, Detochenko AP, Koroleva AV et al. The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon. In Pichler P, Pichler P, editors, Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications Ltd. 2016. p. 327-331. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.242.327