Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov, O.M. Osmolovskaya, V.M. Smirnov, I.V. Murin, A.S. Loshachenko

Research output

1 Citation (Scopus)

Abstract

Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.
Original languageEnglish
Pages (from-to)1586-1588
JournalRussian Journal of General Chemistry
Volume83
Issue number8
DOIs
Publication statusPublished - 2013

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