Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface

D. V. Nazarov; O. M. Osmolovskaya; V. M. Smirnov; I. V. Murin; A. S. Loshachenko

doi:10.1134/S1070363213080185

Synthesis and electrophysical characteristics of VO₂-based nanostructures with a complicated architecture on a silicon surface

D. V. Nazarov, O. M. Osmolovskaya, V. M. Smirnov, I. V. Murin, A. S. Loshachenko

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Abstract

Nanofilms of complicated architecture based on VO₂ and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO₂-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO ₂ affects the phase transition characteristics.

Original language	English
Pages (from-to)	1586-1588
Number of pages	3
Journal	Russian Journal of General Chemistry
Volume	83
Issue number	8
DOIs	https://doi.org/10.1134/S1070363213080185 https://doi.org/10.1134/S1070363213080185
State	Published - Aug 2013

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@article{378ba2b9216f4468a8d68581b283e67d,

title = "Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface",

abstract = "Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.",

author = "Nazarov, {D. V.} and Osmolovskaya, {O. M.} and Smirnov, {V. M.} and Murin, {I. V.} and Loshachenko, {A. S.}",

note = "Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project no. 12-03-00244-a).",

year = "2013",

month = aug,

doi = "10.1134/S1070363213080185",

language = "English",

volume = "83",

pages = "1586--1588",

journal = "Russian Journal of General Chemistry",

issn = "1070-3632",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "8",

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TY - JOUR

T1 - Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface

AU - Nazarov, D. V.

AU - Osmolovskaya, O. M.

AU - Smirnov, V. M.

AU - Murin, I. V.

AU - Loshachenko, A. S.

N1 - Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project no. 12-03-00244-a).

PY - 2013/8

Y1 - 2013/8

N2 - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.

AB - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84885149517&partnerID=8YFLogxK

U2 - 10.1134/S1070363213080185

DO - 10.1134/S1070363213080185

M3 - Article

VL - 83

SP - 1586

EP - 1588

JO - Russian Journal of General Chemistry

JF - Russian Journal of General Chemistry

SN - 1070-3632

IS - 8

ER -

Synthesis and electrophysical characteristics of VO₂-based nanostructures with a complicated architecture on a silicon surface

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