Synthesis and Electrophysical Characteristics
of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov; O.M. Osmolovskaya; V.M. Smirnov; I.V. Murin; A.S. Loshachenko

doi:10.1134/S1070363213080185

Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

D.V. Nazarov, O.M. Osmolovskaya, V.M. Smirnov, I.V. Murin, A.S. Loshachenko

Research output

1 Citation (Scopus)

Abstract

Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.

Original language	English
Pages (from-to)	1586-1588
Journal	Russian Journal of General Chemistry
Volume	83
Issue number	8
DOIs	https://doi.org/10.1134/S1070363213080185
Publication status	Published - 2013

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abstract = "Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.",

author = "D.V. Nazarov and O.M. Osmolovskaya and V.M. Smirnov and I.V. Murin and A.S. Loshachenko",

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AU - Nazarov, D.V.

AU - Osmolovskaya, O.M.

AU - Smirnov, V.M.

AU - Murin, I.V.

AU - Loshachenko, A.S.

PY - 2013

Y1 - 2013

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AB - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130–160 and 100–110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.

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DO - 10.1134/S1070363213080185

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EP - 1588

JO - Russian Journal of General Chemistry

JF - Russian Journal of General Chemistry

SN - 1070-3632

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