Studying the Semiconductor–Metal Phase Transition in Nanoscale Vanadium Dioxide, Doped with Ions of 3d-Elements on a Silicon Surface

D.V. Nazarov; O.M. Osmolowskaya; V.M. Smirnov; O.V. Glumov; N.A. Melnikova; I.V. Murin

doi:10.3103/S1062873813030301

Studying the Semiconductor–Metal Phase Transition in Nanoscale Vanadium Dioxide, Doped with Ions of 3d-Elements on a Silicon Surface

D.V. Nazarov, O.M. Osmolowskaya, V.M. Smirnov, O.V. Glumov, N.A. Melnikova, I.V. Murin

Research output

Abstract

Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering on the surface of a singlecrystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor metal phase transition in the obtained structures in the range 100–125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.

Original language	English
Pages (from-to)	271-274
Journal	Bulletin of the Russian Academy of Sciences: Physics
Volume	77
Issue number	3
DOIs	https://doi.org/10.3103/S1062873813030301
Publication status	Published - 2013

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@article{9d4639185be146008cf7b73d257c4719,

title = "Studying the Semiconductor–Metal Phase Transition in Nanoscale Vanadium Dioxide, Doped with Ions of 3d-Elements on a Silicon Surface",

abstract = "Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering on the surface of a singlecrystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor metal phase transition in the obtained structures in the range 100–125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.",

author = "D.V. Nazarov and O.M. Osmolowskaya and V.M. Smirnov and O.V. Glumov and N.A. Melnikova and I.V. Murin",

year = "2013",

doi = "10.3103/S1062873813030301",

language = "English",

volume = "77",

pages = "271--274",

journal = "Bulletin of the Russian Academy of Sciences: Physics",

issn = "1062-8738",

publisher = "Allerton Press, Inc.",

number = "3",

}

TY - JOUR

T1 - Studying the Semiconductor–Metal Phase Transition in Nanoscale Vanadium Dioxide, Doped with Ions of 3d-Elements on a Silicon Surface

AU - Nazarov, D.V.

AU - Osmolowskaya, O.M.

AU - Smirnov, V.M.

AU - Glumov, O.V.

AU - Melnikova, N.A.

AU - Murin, I.V.

PY - 2013

Y1 - 2013

N2 - Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering on the surface of a singlecrystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor metal phase transition in the obtained structures in the range 100–125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.

AB - Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering on the surface of a singlecrystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor metal phase transition in the obtained structures in the range 100–125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.

U2 - 10.3103/S1062873813030301

DO - 10.3103/S1062873813030301

M3 - Article

VL - 77

SP - 271

EP - 274

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 3

ER -