Strongly-coupled electron and nuclear spin systems in InGaAs epilayers

A. E. Evdokimov, M. S. Kuznetsova, M. Yu. Petrov, R. A. Potekhin, Yu. P. Efimov, S. A. Eliseev, V. A. Lovtcius, P. Yu. Shapochkin

Research output

Abstract

Photoluminescence (PL) polarization was experimentally studied for the samples with thick InGaAs epitaxial layers with different concentrations of donors in the transverse magnetic field (the Hanle effect). A well-pronounced W-structure observed in the set of samples under study indicate a strong electron-nuclear spin interaction. Analysis of the Hanle curves measured at different pumping powers provided important parameters of the electron-nuclear spin system, such as the Knight field and kinetic local field. We obtained characteristic values of the electron spin relaxation time by modeling the Hanle curves measured with fast modulation of the excitation polarization at different pumping powers,.

Original languageEnglish
Article number012002
JournalJournal of Physics: Conference Series
Volume1199
Issue number1
DOIs
Publication statusPublished - 17 Apr 2019
Event20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg
Duration: 26 Nov 201830 Nov 2018

Scopus subject areas

  • Physics and Astronomy(all)

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