Stacking faults as a novel 2D potential for excitons

Kai Mei C. Fu, Todd Karin, Xiayu Linpeng, M. M. Glazov, M. V. Durnev, E. L. Ivchenko, Sarah Harvey, Ashish K. Rai, Arne Ludwig, Andreas D. Wieck

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

We investigate the properties of excitons bound to single stacking faults in GaAs, finding an ultra-narrow photoluminescence linewidth and a giant built-in dipole moment.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
StatePublished - 16 Dec 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period5/06/1610/06/16

Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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