Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

Ryota Akiyama, Kazuki Sumida, Satoru Ichinokura, Ryosuke Nakanishi, Akio Kimura, Konstantin A. Kokh, Oleg E. Tereshchenko, Shuji Hasegawa

Research output

Abstract

We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

Original languageEnglish
Article number265001
JournalJournal of Physics Condensed Matter
Volume30
Issue number26
DOIs
Publication statusPublished - 6 Jun 2018

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insulators
Scattering
oscillations
Carrier mobility
Fermi level
Fans
Tuning
Physical properties
flakes
carrier mobility
fans
scattering
physical properties
plots
diagrams
tuning

Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Akiyama, R., Sumida, K., Ichinokura, S., Nakanishi, R., Kimura, A., Kokh, K. A., ... Hasegawa, S. (2018). Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. Journal of Physics Condensed Matter, 30(26), [265001]. https://doi.org/10.1088/1361-648X/aac59b
Akiyama, Ryota ; Sumida, Kazuki ; Ichinokura, Satoru ; Nakanishi, Ryosuke ; Kimura, Akio ; Kokh, Konstantin A. ; Tereshchenko, Oleg E. ; Hasegawa, Shuji. / Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. In: Journal of Physics Condensed Matter. 2018 ; Vol. 30, No. 26.
@article{bf795c9bdd6b4d8cb4751126e140cf7e,
title = "Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3",
abstract = "We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.",
keywords = "(BiSb)Te, Berry phase, electrical transport, quantum oscillation, Shubnikov-de Haas oscillation, topological insulator",
author = "Ryota Akiyama and Kazuki Sumida and Satoru Ichinokura and Ryosuke Nakanishi and Akio Kimura and Kokh, {Konstantin A.} and Tereshchenko, {Oleg E.} and Shuji Hasegawa",
year = "2018",
month = "6",
day = "6",
doi = "10.1088/1361-648X/aac59b",
language = "English",
volume = "30",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "26",

}

Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. / Akiyama, Ryota; Sumida, Kazuki; Ichinokura, Satoru; Nakanishi, Ryosuke; Kimura, Akio; Kokh, Konstantin A.; Tereshchenko, Oleg E.; Hasegawa, Shuji.

In: Journal of Physics Condensed Matter, Vol. 30, No. 26, 265001, 06.06.2018.

Research output

TY - JOUR

T1 - Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

AU - Akiyama, Ryota

AU - Sumida, Kazuki

AU - Ichinokura, Satoru

AU - Nakanishi, Ryosuke

AU - Kimura, Akio

AU - Kokh, Konstantin A.

AU - Tereshchenko, Oleg E.

AU - Hasegawa, Shuji

PY - 2018/6/6

Y1 - 2018/6/6

N2 - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

AB - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

KW - (BiSb)Te

KW - Berry phase

KW - electrical transport

KW - quantum oscillation

KW - Shubnikov-de Haas oscillation

KW - topological insulator

UR - http://www.scopus.com/inward/record.url?scp=85049032658&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/aac59b

DO - 10.1088/1361-648X/aac59b

M3 - Article

AN - SCOPUS:85049032658

VL - 30

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 26

M1 - 265001

ER -