Self-induced-transparency mode locking in a Ti: sapphire laser with an intracavity rubidium cell

M. V. Arkhipov, A. A. Shimko, N. N. Rosanov, I. Babushkin, R. M. Arkhipov

Research output

1 Citation (Scopus)

Abstract

In self-induced-transparency (SIT) mode locking, 2 pi SIT solitons with a duration much smaller than the polarization relaxation time T-2 in the gain and absorber are formed in a laser cavity. This is in contrast to standard passive mode-locking schemes based on gain and absorption saturation. Despite the great promise, up to now SIT mode locking with 2 pi pulses was mainly studied theoretically. In this paper, a stable self-starting passive mode locking is demonstrated experimentally in a Ti: sapphire laser with a Rb vapor cell. We show that the mode locking indeed appears to be due to SIT in the Rb cell; that is, the pulse in the Rb cell is a 2 pi SIT soliton. We also confirm self-starting of the SIT mode locking. Self-starting takes place via a set of intermediate regimes, including the one containing zero-area pulses.

Original languageEnglish
Article number013803
Number of pages7
JournalPhysical Review A
Volume101
Issue number1
DOIs
Publication statusPublished - 7 Jan 2020

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