Saturated layer gain in waveguides with InGaAs quantum well-dot heterostructures

Alexey M. Nadtochiy, Nikita Yu Gordeev, Anton A. Kharchenko, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Yury M. Shernyakov, Mikhail V. Maximov, Alexey E. Zhukov, Yury Berdnikov

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Modal absorptions in laser-like heterostructures containing InAs self-assembled quantum dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied. The evaluation of photoresponse as a function of waveguide length has allowed us to determine per-layer modal absorptions of 69 and 13 cm-1 for the ground state optical transitions of QWDs and QDs, respectively. The values of the modal absorption can be used as a measure of the maximal (saturated) modal gain. To compare quantum heterostructures with different dimensionality we have introduced the layer gain constant, a parameter characterizing the light transmittance through the absorbing or gaining layer. We have shown that the QWD layer gain constant significantly exceeds quantum well and quantum dot ones.

Original languageEnglish
JournalJournal of Lightwave Technology
DOIs
StatePublished - 2021

Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Keywords

  • Absorption
  • Gain measurement
  • Gallium arsenide
  • Heterostructures
  • Optical saturation
  • Optical waveguides
  • Photoresponsivity
  • Quantum dot lasers
  • Quantum well-dots
  • Semiconductor device measurement
  • Semiconductor lasers
  • Semiconductor nanostructures
  • Semiconductor waveguides
  • Waveguide lasers
  • Waveguide photodetectors

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