Photoluminescence manipulation by ion beam irradiation in CsPbBr3 halide perovskite single crystals

Research output

Abstract

Halide perovskites are promising materials for optoelectronics with an attractive radiation resistance property. In this article, we study the effect of 30 keV Ga+ ion irradiation on the photoluminescence (PL) of CsPbBr3 halide perovskite single crystals. The high crystal quality and liquid helium temperature studies make it possible to distinguish the radiation-defect-related PL band. A model to explain the band shifts with radiation dose and pulsed pump intensity has been developed. Bright defect PL allows the visualization of the irradiated areas using PL mapping. Manipulation of optical properties using focused ion beams opens wide opportunities for halide perovskite nanofabrication for optoelectronics.

Original languageEnglish
Pages (from-to)21130-21134
JournalJournal of Physical Chemistry C
Volume123
Issue number34
DOIs
Publication statusPublished - 2 Aug 2019

Fingerprint

Perovskite
Ion beams
halides
manipulators
Photoluminescence
ion beams
Irradiation
Single crystals
photoluminescence
irradiation
single crystals
Optoelectronic devices
Radiation
Liquid Crystals
Helium
Defects
nanofabrication
Focused ion beams
defects
radiation tolerance

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

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title = "Photoluminescence manipulation by ion beam irradiation in CsPbBr3 halide perovskite single crystals",
abstract = "Halide perovskites are promising materials for optoelectronics with an attractive radiation resistance property. In this article, we study the effect of 30 keV Ga+ ion irradiation on the photoluminescence (PL) of CsPbBr3 halide perovskite single crystals. The high crystal quality and liquid helium temperature studies make it possible to distinguish the radiation-defect-related PL band. A model to explain the band shifts with radiation dose and pulsed pump intensity has been developed. Bright defect PL allows the visualization of the irradiated areas using PL mapping. Manipulation of optical properties using focused ion beams opens wide opportunities for halide perovskite nanofabrication for optoelectronics.",
author = "Yudin, {Vsevolod I.} and Lozhkin, {Maksim S.} and Shurukhina, {Anna V.} and Emeline, {Alexey V.} and Kapitonov, {Yury V.}",
year = "2019",
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T1 - Photoluminescence manipulation by ion beam irradiation in CsPbBr3 halide perovskite single crystals

AU - Yudin, Vsevolod I.

AU - Lozhkin, Maksim S.

AU - Shurukhina, Anna V.

AU - Emeline, Alexey V.

AU - Kapitonov, Yury V.

PY - 2019/8/2

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AB - Halide perovskites are promising materials for optoelectronics with an attractive radiation resistance property. In this article, we study the effect of 30 keV Ga+ ion irradiation on the photoluminescence (PL) of CsPbBr3 halide perovskite single crystals. The high crystal quality and liquid helium temperature studies make it possible to distinguish the radiation-defect-related PL band. A model to explain the band shifts with radiation dose and pulsed pump intensity has been developed. Bright defect PL allows the visualization of the irradiated areas using PL mapping. Manipulation of optical properties using focused ion beams opens wide opportunities for halide perovskite nanofabrication for optoelectronics.

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