Photoelectric properties of MIS structures on high-resistivity p-type silicon with aluminium nitride tunnelling insulator

N. V. Bazlov, A. M. Danishevskii, A. V. Derbin, I. S. Drachnev, I. M. Kotina, O. I. Konkov, A. M. Kuzmichev, M. S. Lasakov, M. V. Trushin, E. V. Unzhakov

Research output: Contribution to journalConference articlepeer-review

Abstract

Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.

Original languageEnglish
Article number012181
JournalJournal of Physics: Conference Series
Volume1697
Issue number1
DOIs
StatePublished - 17 Dec 2020
EventInternational Conference PhysicA.SPb 2020 - ФТИ им. А.Ф. Иоффе, Санкт-Петербург, Russian Federation
Duration: 19 Oct 202023 Oct 2020
http://physica.spb.ru/

Scopus subject areas

  • Physics and Astronomy(all)

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