Photoelectric properties of MIS tunnel diodes produced on high-resistive p-type silicon wafers with thin aluminium nitride AlN insulator layer and Pd or Al metal gate electrodes were investigated. It was found that synthesized AlN films possess a fixed positive charge, which leads to the creation of near-surface inversion layer in silicon substrate. The ratio of the photocurrent to the dark current K = Iph / Idark (on / off ratio) was found to depend on the gate electrode material, illumination intensity and the applied reverse bias. For studied MIS structures K ratio varied from 10 4 to 10 5 and was two orders of magnitude higher than that for the control MS structure without the insulator layer. High on / off ratio of such MIS structures with AlN tunnelling insulator promotes their application as an effective photodetectors in optoelectronics.
|Journal||Journal of Physics: Conference Series|
|State||Published - 17 Dec 2020|
|Event||International Conference PhysicA.SPb 2020 - ФТИ им. А.Ф. Иоффе, Санкт-Петербург, Russian Federation|
Duration: 19 Oct 2020 → 23 Oct 2020
Scopus subject areas
- Physics and Astronomy(all)