Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon

D. V. Danilov, O. F. Vyvenko, A. S. Loshachenko, N. A. Sobolev

Research output

Abstract

The peculiarities of electron emission from electronic states of nanodefects formed at the early stages of oxygen precipitation in oxygen-implanted silicon annealed at 700°C were investigated with a combination of capacitance and current transient spectroscopy of the space charge region (SCR) in semiconductors. It was established that the particular properties of acceptor-like states are due to their high density and their localization at the back side of the implanted region. A model is suggested that explains an apparent emission rate slowdown and the appearance of an unexpected sign of capacitance relaxation signal as a result of the non-monotonic shape of the potential of the Schottky-diode.

Original languageEnglish
Article number012003
JournalJournal of Physics: Conference Series
Volume1482
Issue number1
DOIs
Publication statusPublished - 25 Mar 2020
Event21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg
Duration: 25 Nov 201929 Nov 2019

Scopus subject areas

  • Physics and Astronomy(all)

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