Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

D. Danilov, O. Vyvenko, M. Trushin, A. Loshachenko, N. Sobolev

Research output

2 Citations (Scopus)

Abstract

Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.

Original languageEnglish
Article number012016
JournalJournal of Physics: Conference Series
Volume1190
Issue number1
DOIs
Publication statusPublished - 23 May 2019
Event19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki
Duration: 24 Jun 201829 Jun 2018

Scopus subject areas

  • Physics and Astronomy(all)

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