Abstract
Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.
| Original language | English |
|---|---|
| Article number | 012016 |
| Journal | Journal of Physics: Conference Series |
| Volume | 1190 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 23 May 2019 |
| Event | 19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki Duration: 24 Jun 2018 → 29 Jun 2018 |
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Scopus subject areas
- Physics and Astronomy(all)
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Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon. / Danilov, D.; Vyvenko, O.; Trushin, M.; Loshachenko, A.; Sobolev, N.
In: Journal of Physics: Conference Series, Vol. 1190, No. 1, 012016, 23.05.2019.Research output
TY - JOUR
T1 - Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon
AU - Danilov, D.
AU - Vyvenko, O.
AU - Trushin, M.
AU - Loshachenko, A.
AU - Sobolev, N.
PY - 2019/5/23
Y1 - 2019/5/23
N2 - Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.
AB - Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.
UR - http://www.scopus.com/inward/record.url?scp=85067006485&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1190/1/012016
DO - 10.1088/1742-6596/1190/1/012016
M3 - Conference article
AN - SCOPUS:85067006485
VL - 1190
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012016
ER -