Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

D. Danilov; O. Vyvenko; M. Trushin; A. Loshachenko; N. Sobolev

doi:10.1088/1742-6596/1190/1/012016

Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

D. Danilov, O. Vyvenko, M. Trushin, A. Loshachenko, N. Sobolev

Research output

2 Citations (Scopus)

Abstract

Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiO_x shell of predominantly stoichiometric OP core.

Original language	English
Article number	012016
Journal	Journal of Physics: Conference Series
Volume	1190
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1190/1/012016
Publication status	Published - 23 May 2019
Event	19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki Duration: 24 Jun 2018 → 29 Jun 2018

Scopus subject areas

Physics and Astronomy(all)

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10.1088/1742-6596/1190/1/012016

http://www.scopus.com/inward/record.url?scp=85067006485&partnerID=8YFLogxK

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title = "Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon",

abstract = "Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.",

author = "D. Danilov and O. Vyvenko and M. Trushin and A. Loshachenko and N. Sobolev",

year = "2019",

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T1 - Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

AU - Danilov, D.

AU - Vyvenko, O.

AU - Trushin, M.

AU - Loshachenko, A.

AU - Sobolev, N.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.

AB - Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100° have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.

UR - http://www.scopus.com/inward/record.url?scp=85067006485&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1190/1/012016

DO - 10.1088/1742-6596/1190/1/012016

M3 - Conference article

AN - SCOPUS:85067006485

VL - 1190

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012016

T2 - 19th International Conference on Extended Defects in Semiconductors, EDS 2018

Y2 - 24 June 2018 through 29 June 2018

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