Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

Research outputpeer-review

Abstract

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.
Original languageEnglish
Pages (from-to)602-604
Number of pages3
JournalSemiconductors
Volume52
Issue number5
DOIs
Publication statusPublished - 1 May 2018

Scopus subject areas

  • Condensed Matter Physics

Cite this