Optical detection of spin-filter effect for electron spin polarimetry

X. Li, O.E. Tereshchenko, S. Majee, G. Lampel, Y. Lassailly, D. Paget, J. Peretti

Research output

9 Citations (Scopus)

Abstract

We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. © 2014 AIP Publishing LLC.
Original languageUndefined
JournalApplied Physics Letters
Volume105
Issue number052402
Publication statusPublished - 2014
Externally publishedYes

Cite this

Li, X., Tereshchenko, O. E., Majee, S., Lampel, G., Lassailly, Y., Paget, D., & Peretti, J. (2014). Optical detection of spin-filter effect for electron spin polarimetry. Applied Physics Letters, 105(052402).
Li, X. ; Tereshchenko, O.E. ; Majee, S. ; Lampel, G. ; Lassailly, Y. ; Paget, D. ; Peretti, J. / Optical detection of spin-filter effect for electron spin polarimetry. In: Applied Physics Letters. 2014 ; Vol. 105, No. 052402.
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abstract = "We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. {\circledC} 2014 AIP Publishing LLC.",
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Li, X, Tereshchenko, OE, Majee, S, Lampel, G, Lassailly, Y, Paget, D & Peretti, J 2014, 'Optical detection of spin-filter effect for electron spin polarimetry', Applied Physics Letters, vol. 105, no. 052402.

Optical detection of spin-filter effect for electron spin polarimetry. / Li, X.; Tereshchenko, O.E.; Majee, S.; Lampel, G.; Lassailly, Y.; Paget, D.; Peretti, J.

In: Applied Physics Letters, Vol. 105, No. 052402, 2014.

Research output

TY - JOUR

T1 - Optical detection of spin-filter effect for electron spin polarimetry

AU - Li, X.

AU - Tereshchenko, O.E.

AU - Majee, S.

AU - Lampel, G.

AU - Lassailly, Y.

AU - Paget, D.

AU - Peretti, J.

PY - 2014

Y1 - 2014

N2 - We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. © 2014 AIP Publishing LLC.

AB - We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices. © 2014 AIP Publishing LLC.

M3 - статья

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 052402

ER -

Li X, Tereshchenko OE, Majee S, Lampel G, Lassailly Y, Paget D et al. Optical detection of spin-filter effect for electron spin polarimetry. Applied Physics Letters. 2014;105(052402).