On a new method of heterojunction formation in III-V nanowires

N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii

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    Abstract

    The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor-liquid-solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.

    Original languageEnglish
    Pages (from-to)1566-1568
    Number of pages3
    JournalSemiconductors
    Volume50
    Issue number12
    DOIs
    StatePublished - Dec 2016
    EventInternational Symposium on Nanophysics and Nanoelectronics - Nizhny Novgorod
    Duration: 13 Mar 201617 Mar 2016
    Conference number: 20
    http://nanosymp.ru/ru/index
    http://nanosymp.ru/ru/archive

    Keywords

    • HETEROSTRUCTURE FORMATION
    • NANOWHISKERS
    • NANOSTRUCTURES
    • ABRUPTNESS
    • GROWTH

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