Standard

O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing. / Almaev, A.v.; Yakovlev, N.n.; Kushnarev, B.o.; Nikolaev, V.i.; Butenko, P.n.; Yatsenko, A.a.; Sharkov, M.d.; Pechnikov, A.i.; Ankudinov, A.v.; Sergienko, E.s.; Chikiryaka, A.v.

In: Sensors and Actuators, B: Chemical, Vol. 444, No. 1, 138355, 01.12.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Almaev, AV, Yakovlev, NN, Kushnarev, BO, Nikolaev, VI, Butenko, PN, Yatsenko, AA, Sharkov, MD, Pechnikov, AI, Ankudinov, AV, Sergienko, ES & Chikiryaka, AV 2025, 'O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing', Sensors and Actuators, B: Chemical, vol. 444, no. 1, 138355. https://doi.org/10.1016/j.snb.2025.138355

APA

Almaev, A. V., Yakovlev, N. N., Kushnarev, B. O., Nikolaev, V. I., Butenko, P. N., Yatsenko, A. A., Sharkov, M. D., Pechnikov, A. I., Ankudinov, A. V., Sergienko, E. S., & Chikiryaka, A. V. (2025). O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing. Sensors and Actuators, B: Chemical, 444(1), [138355]. https://doi.org/10.1016/j.snb.2025.138355

Vancouver

Almaev AV, Yakovlev NN, Kushnarev BO, Nikolaev VI, Butenko PN, Yatsenko AA et al. O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing. Sensors and Actuators, B: Chemical. 2025 Dec 1;444(1). 138355. https://doi.org/10.1016/j.snb.2025.138355

Author

Almaev, A.v. ; Yakovlev, N.n. ; Kushnarev, B.o. ; Nikolaev, V.i. ; Butenko, P.n. ; Yatsenko, A.a. ; Sharkov, M.d. ; Pechnikov, A.i. ; Ankudinov, A.v. ; Sergienko, E.s. ; Chikiryaka, A.v. / O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing. In: Sensors and Actuators, B: Chemical. 2025 ; Vol. 444, No. 1.

BibTeX

@article{c215cf6bf9a24aabbdbcda6f4b2fbfb7,
title = "O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing",
abstract = "Gas-sensitive β-Ga2O3 microcrystals on GaN were self-formed as a result of solid-state phase transition from an HVPE κ-Ga2O3 epitaxial layer with Pt contacts during its high-temperature annealing (30 min at 1000°C in air). The β-Ga2O3 microcrystals are characterized by increased electrical conductance and high gas response compared to the epitaxial κ-Ga2O3 and β-Ga2O3 films. The response of the β-Ga2O3 microcrystals to 5 vol% of O2 was 11.33 at the temperature of maximum response corresponding to 650°C. It was shown that the gas-sensitive characteristics of the β-Ga2O3 microcrystals change weakly under cyclic O2 exposure, as well as under changes in the relative humidity of the gas mixture in the range of 8–70 % and depend significantly on the polarity of the applied voltage. The samples showed high sensitivity to NO and CO2. The responses at 650°C to 1 ppm of NO and 1 vol% of CO2 were 1.7 and 10.4, correspondingly. The mechanism of the observed effect and the possibility of using the β-Ga2O3 microcrystals for sensitive elements of λ-probes are discussed.",
author = "A.v. Almaev and N.n. Yakovlev and B.o. Kushnarev and V.i. Nikolaev and P.n. Butenko and A.a. Yatsenko and M.d. Sharkov and A.i. Pechnikov and A.v. Ankudinov and E.s. Sergienko and A.v. Chikiryaka",
year = "2025",
month = dec,
day = "1",
doi = "10.1016/j.snb.2025.138355",
language = "English",
volume = "444",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - O2 sensors for λ-probe based on β-Ga2O3 microcrystals fabricated from к-Ga2O3 epitaxial film by thermal annealing

AU - Almaev, A.v.

AU - Yakovlev, N.n.

AU - Kushnarev, B.o.

AU - Nikolaev, V.i.

AU - Butenko, P.n.

AU - Yatsenko, A.a.

AU - Sharkov, M.d.

AU - Pechnikov, A.i.

AU - Ankudinov, A.v.

AU - Sergienko, E.s.

AU - Chikiryaka, A.v.

PY - 2025/12/1

Y1 - 2025/12/1

N2 - Gas-sensitive β-Ga2O3 microcrystals on GaN were self-formed as a result of solid-state phase transition from an HVPE κ-Ga2O3 epitaxial layer with Pt contacts during its high-temperature annealing (30 min at 1000°C in air). The β-Ga2O3 microcrystals are characterized by increased electrical conductance and high gas response compared to the epitaxial κ-Ga2O3 and β-Ga2O3 films. The response of the β-Ga2O3 microcrystals to 5 vol% of O2 was 11.33 at the temperature of maximum response corresponding to 650°C. It was shown that the gas-sensitive characteristics of the β-Ga2O3 microcrystals change weakly under cyclic O2 exposure, as well as under changes in the relative humidity of the gas mixture in the range of 8–70 % and depend significantly on the polarity of the applied voltage. The samples showed high sensitivity to NO and CO2. The responses at 650°C to 1 ppm of NO and 1 vol% of CO2 were 1.7 and 10.4, correspondingly. The mechanism of the observed effect and the possibility of using the β-Ga2O3 microcrystals for sensitive elements of λ-probes are discussed.

AB - Gas-sensitive β-Ga2O3 microcrystals on GaN were self-formed as a result of solid-state phase transition from an HVPE κ-Ga2O3 epitaxial layer with Pt contacts during its high-temperature annealing (30 min at 1000°C in air). The β-Ga2O3 microcrystals are characterized by increased electrical conductance and high gas response compared to the epitaxial κ-Ga2O3 and β-Ga2O3 films. The response of the β-Ga2O3 microcrystals to 5 vol% of O2 was 11.33 at the temperature of maximum response corresponding to 650°C. It was shown that the gas-sensitive characteristics of the β-Ga2O3 microcrystals change weakly under cyclic O2 exposure, as well as under changes in the relative humidity of the gas mixture in the range of 8–70 % and depend significantly on the polarity of the applied voltage. The samples showed high sensitivity to NO and CO2. The responses at 650°C to 1 ppm of NO and 1 vol% of CO2 were 1.7 and 10.4, correspondingly. The mechanism of the observed effect and the possibility of using the β-Ga2O3 microcrystals for sensitive elements of λ-probes are discussed.

U2 - 10.1016/j.snb.2025.138355

DO - 10.1016/j.snb.2025.138355

M3 - Article

VL - 444

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

M1 - 138355

ER -

ID: 138634632