Numerical study of one-fold coordinated oxygen atom in silicon gate oxide

V. A. Gritsenko, A. Shaposhnikov, Yu N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger

Research outputpeer-review

2 Citations (Scopus)

Abstract

The capturing properties of nonbridging oxygen hole centers with unpaired electrons ≡SiO· and hydrogen defects ≡SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the ≡SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.

Original languageEnglish
Title of host publicationProceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-42
Number of pages4
ISBN (Electronic)0780374290
DOIs
Publication statusPublished - 1 Jan 2002
Event9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong
Duration: 22 Jun 2002 → …

Publication series

NameProceedings of the IEEE Hong Kong Electron Devices Meeting
Volume2002-January

Conference

Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
CountryChina
CityHong Kong
Period22/06/02 → …

Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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