The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 17 Apr 2019|
|Event||20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg|
Duration: 26 Nov 2018 → 30 Nov 2018
Scopus subject areas
- Physics and Astronomy(all)