3 Citations (Scopus)

Abstract

The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.

Original languageEnglish
Article number012018
JournalJournal of Physics: Conference Series
Volume1199
Issue number1
DOIs
Publication statusPublished - 17 Apr 2019
Event20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg
Duration: 26 Nov 201830 Nov 2018

Scopus subject areas

  • Physics and Astronomy(all)

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